IPD100N04S4-02INFINEON英飞凌电子元器件芯片.pdf资源-CSDN文库

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IPD100N04S4-02

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

1)

I

D

T

C

=25°C, V

GS

=10V

100 A

T

C

=100°C, V

GS

=10V

2)

100

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

400

Avalanche energy, single pulse

2)

E

AS

I

D

=50A

440 mJ

Avalanche current, single pulse

I

AS

-

100 A

Gate source voltage

V

GS

- ±20 V

Power dissipation

P

tot

T

C

=25°C

150 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

40 V

R

DS(on),max

2.0

mΩ

I

D

100 A

Product Summary

PG-TO252-3-313

Type Package Marking

IPD100N04S4-02 PG-TO252-3-313 4N0402

Rev. 1.0 page 1 2010-04-13

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