IPD100N04S4-02
OptiMOS
®
-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25°C, V
GS
=10V
100 A
T
C
=100°C, V
GS
=10V
2)
100
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
400
Avalanche energy, single pulse
2)
E
AS
I
D
=50A
440 mJ
Avalanche current, single pulse
I
AS
-
100 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25°C
150 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
40 V
R
DS(on),max
2.0
mΩ
I
D
100 A
Product Summary
PG-TO252-3-313
Type Package Marking
IPD100N04S4-02 PG-TO252-3-313 4N0402
Rev. 1.0 page 1 2010-04-13
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