The rst junction bipolar
transistor
Shockley was annoyed that he hadn’t been involved in Bardeen & Brattain’s
point contact transistor so he spent New Year’s eve 1947 in a Chicago hotel
room designing an even better device, the junction transistor containing a
very thin p-type layer sandwiched between two n-type Ge layers. Electrons in
this device travel through the bulk of the semiconductor rather than across
the surface. It was more robust and reproducible than the point-contact
device and is the subject of this part…
Shockley semiconductor
the first to settle in Palo Alto – Silicon Valley
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