TI-DS15BA101.pdf

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

(1) "Absolute Maximum Ratings" are those parameter values beyond which the life and operation of the device cannot be ensured. The

stating herein of these maximums shall not be construed to imply that the device can or should be operated at or beyond these values.

The table of "Electrical Characteristics" specifies acceptable device operating conditions.

)

Differential Input Voltage Swing 100 2000 mV

Output Common Mode Voltage OUT+, OUT- V

–

V

V

/2

Single-ended, 25Ω load

800 mV

R

= 487Ω 1%,

Supply Current See Note

45 49 mA

(1) Current flow into device pins is defined as positive. Current flow out of device pins is defined as negative. All voltages are stated

referenced to GND.

IN+, IN- 1.5 2.0 Gbps

OUT+, OUT-