National-Semiconductor-NM27C512.pdf
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TL/D/10834
NM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
February 1994
NM27C512
524,288-Bit (64K x 8) High Performance CMOS EPROM
General Description
The NM27C512 is a high performance 512K UV Erasable
Electrically Programmable Read Only Memory (EPROM). It
is manufactured using National’s proprietary 0.8 micron
CMOS AMG
TM
EPROM technology for an excellent combi-
nation of speed and economy while providing excellent reli-
ability.
The NM27C512 provides microprocessor-based systems
storage capacity for portions of operating system and appli-
cation software. Its 90 ns access time provides no-
wait-state operation with high-performance CPUs. The
NM27C512 offers a single chip solution for the code storage
requirements of 100% firmware-based equipment. Fre-
quently-used software routines are quickly executed from
EPROM storage, greatly enhancing system utility.
The NM27C512 is configured in the standard JEDEC
EPROM pinout which provides an easy upgrade path for
systems which are currently using standard EPROMs.
The NM27C512 is one member of a high density EPROM
Family which range in densities up to 4 Megabit.
Features
Y
High performance CMOS
Ð 90 ns access time
Y
Fast turn-off for microprocessor compatibility
Y
Manufacturers identification code
Y
JEDEC standard pin configuration
Ð 28-pin DIP package
Ð 32-pin chip carrier
Block Diagram
TL/D/10834–1
TRI-STATE
É
is a registered trademark of National Semiconductor Corporation.
NSC800
TM
is a trademark of National Semiconductor Corporation.
AMG
TM
is a trademark of WSI, Inc.
C
1995 National Semiconductor Corporation RRD-B30M65/Printed in U. S. A.
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