TI-TPS25740B.pdf资源-CSDN文库

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DRV

UCC24636

From AC Mains

TL431

GND

LDO

UCC28740

TPS25740B

VDD

CC2

AGND

DVDD

CC1

DSCG

VTX

GND

GDNG

GDNS

CTL2

CTL1

Type-C

Plug

BUS

VPWR

HIPWR

PCTRL

PSEL

VAUX

VBUS

ISNS

ENSRC

CSD17579Q3A

Power Supply

CTL3

Product

Folder

Order

Now

Technical

Documents

Tools &

Software

Support &

Community

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SLVSDR6

TPS25740B

ZHCSGV1A –JUNE 2017–REVISED SEPTEMBER 2017

TPS25740B USB Type-C™ 和和 USB PD 源源控控制制器器

1 特特性性

• 通过 USB PD 2.0 认证（TID 编号 1030004）并符

合 USB PD 3.0 标准的供电器件

• 可通过引脚选择传输电压

– 5V、9V、12V 和 15V

– 5V、9V、15V 和 20V

• 可通过引脚选择峰值功率设置

– 8 个选项，取值范围为 18W 至 100W

• 高电压和安全功能集成

– 过压、过流、过热保护以及 V

BUS

放电

– CC1 和 CC2 上具有 IEC 61000-4-2 保护

– 故障状态下快速关断的输入引脚

– 外部 N 沟道 MOSFET 控制

– 3 引脚外部电源控制

– 宽 VIN 电源 (4.65V – 25V)

• 断开时的静态电流低于 10µA

• 端口连接指示器

• 用于双端口应用的自定向端口电源管理功能

2 应应用用

• USB-PD 适配器（数据较少）

• 专用充电端口（数据较少）

• 电源集线器（数据较少）

• 移动电源

• 点烟器适配器 (CLA)

3 说说明明

无需任何固件配置，TPS25740B 即可实现通过 USB

电力输送 2.0 版本 1.2 认证和 Type-C™修订版 1.2 认

证的发送器，旨在最大限度缩短上市时间。根据设计，

该器件可与任何符合 USB PD 3.0 标准的接收器无缝

协作。该器件可通过监控 CC 引脚来检测是否有 USB

Type-C 接收器接入，然后通过启用 N 沟道 MOSFET

栅极驱动器来接通 VBUS。该器件随后使用 USB 电力

输送技术提供四种不同的电压。该器件使用三个输入引

脚（PSEL、HIPWR 和 PCTRL）来配置传输的电压和

电流。该器件会根据接入接收器的电压请求，使用

CTL1、CTL2 和 CTL3 引脚选择所需的电源电压。该

器件会按照 USB PD 要求自动使 VBUS 输出放电。

未连接设备时，TPS25740B 的流耗通常为

8.5µA（VDD = 3.3V 时为 5.8µA）。此外，还可以在

未连接设备时通过端口连接指示器 (DVDD) 输出来禁

用电源，从而节省更多的系统功耗。

保护特性包括过压保护、过流保护、过热保护、CC

引脚上的 IEC 保护以及用于禁用栅极驱动器的系统重

写引脚 (GD)。

器器件件信信息息

(1)

器器件件型型号号封封装装封封装装尺尺寸寸（（标标称称值值））

TPS25740B VQFN (24) 4.00mm x 4.00mm

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

简简化化电电路路原原理理图图

TPS25740B

ZHCSGV1A –JUNE 2017–REVISED SEPTEMBER 2017

www.ti.com.cn

目目录录

1 特特性性.......................................................................... 1

2 应应用用.......................................................................... 1

3 说说明明.......................................................................... 1

4 修修订订历历史史记记录录 ........................................................... 2

5 Device Comparison Table..................................... 3

6 Pin Configuration and Functions......................... 3

7 Specifications......................................................... 5

7.1 Absolute Maximum Ratings ...................................... 5

7.2 ESD Ratings ............................................................ 5

7.3 Recommended Operating Conditions....................... 6

7.4 Thermal Information.................................................. 6

7.5 Electrical Characteristics........................................... 7

7.6 Timing Requirements.............................................. 10

7.7 Switching Characteristics........................................ 11

7.8 Typical Characteristics............................................ 16

8 Detailed Description............................................ 18

8.1 Overview ................................................................. 18

8.2 Functional Block Diagram ....................................... 20

8.3 Feature Description................................................. 20

8.4 Device Functional Modes........................................ 35

9 Application and Implementation ........................ 36

9.1 Application Information............................................ 36

9.2 Typical Applications ................................................ 45

9.3 System Examples ................................................... 52

10 Power Supply Recommendations ..................... 55

10.1 VDD....................................................................... 55

10.2 VPWR ................................................................... 55

11 Layout................................................................... 56

11.1 Port Current Kelvin Sensing.................................. 56

11.2 Layout Guidelines ................................................. 56

11.3 Layout Example .................................................... 57

12 器器件件和和文文档档支支持持 ..................................................... 58

12.1 文档支持................................................................ 58

12.2 接收文档更新通知 ................................................. 58

12.3 社区资源................................................................ 58

12.4 商标 ....................................................................... 58

12.5 静电放电警告......................................................... 58

12.6 Glossary................................................................ 58

13 机机械械、、封封装装和和可可订订购购信信息息....................................... 58

4 修修订订历历史史记记录录

Changes from Original (June 2017) to Revision A Page

• 已更改将“高级信息”更改为“生产数据” ................................................................................................................................... 1

TPS25740B

ZHCSGV1A –JUNE 2017–REVISED SEPTEMBER 2017

www.ti.com.cn

Pin Functions (continued)

I/O DESCRIPTION

NAME NO.

CC2 3 I/O

Multifunction configuration channel interface pin to USB Type-C. Functions include connector

polarity, end-device connection detect, current capabilities, and PD communication.

GND 4 —

Power ground is associated with power management and gate driver circuits. Connect to

AGND and PAD.

HIPWR 5 I

Four-state input pin used to configure the voltages and currents that will be advertised. It

may be connected directly to GND or DVDD, or it may be connected to GND or DVDD via a

resistance R

(SEL)

CTL1 6 O Digital output pin used to control an external voltage regulator.

CTL2 7 O Digital output pin used to control an external voltage regulator.

CTL3 8 O Digital output pin used to control an external voltage regulator.

N/C 9 — Connect to GND.

N/C 10 — Connect to GND.

ENSRC 11 O Open drain output pin used to indicate when the VBUS needs to be sourced.

PSEL 12 I

A four-state input used for selecting the maximum power that can be provided. It may be

connected directly to GND or DVDD, or it may be connected to GND or DVDD via a

resistance R

(SEL)

DVDD 13 O

Internally regulated 1.85 V rail for external use up to 35 mA. Connect this pin to GND via the

recommended bypass capacitor.

PCTRL 14 I

Input pin used to control the power that will be advertised. It may be pulled high or low

dynamically.

GD 15 I

Master enable for the GDNG/GDNS gate driver. The system can drive this low to force the

power path switch off.

VAUX 16 O

Internally regulated rail for use by the power management circuits. Connect this pin to GND

via the recommended bypass capacitor.

VDD 17 I Optional input supply.

AGND 18 —

Analog ground associated with monitoring and power conditioning circuits. Connect to GND

and PAD.

ISNS 19 I The ISNS input is used to monitor a VBUS-referenced sense resistor for over-current events.

VPWR 20 I

Connect to an external voltage as a source of bias power. If VDD is supplied, this supply is

optional while DVDD is low.

VBUS 21 I The voltage monitor for the VBUS line.

GDNG 22 O

High-voltage open drain gate driver which may be used to drive NMOS power switches.

Connect to the gate terminal.

GDNS 23 I

High-voltage open drain gate driver which may be used to drive NMOS power switches.

Connect to the source terminal.

DSCG 24 O

Discharge is an open-drain output that discharges the system VBUS line through an external

resistor.

Thermal Pad — — Connect thermal pad to GND / AGND plane.

TPS25740B

www.ti.com.cn

ZHCSGV1A –JUNE 2017–REVISED SEPTEMBER 2017

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Do not apply voltage to these pins.

(3) Voltage allowed to rise above Absolute Maximum provided current is limited.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN MAX UNIT

Pin voltage (sustained)

VDD , CTL1, CTL2, CTL3, ENSRC, PCTRL,

CC1, CC2

–0.3 6 V

VTX

(2)

–0.3 2.1 V

VAUX

(2)

–0.3 4.5 V

(3)

–0.3 7 V

HIPWR, PSEL, DVDD

(2)

–0.3 2.1 V

GDNG

(2)

–0.5 40 V

VBUS,VPWR, ISNS, DSCG, GDNS –0.5 30 V

Pin voltage (transient for 1ms) VBUS,VPWR, ISNS, DSCG, GDNS –1.5 30 V

Pin-to-pin voltage

(GDNG)

– V

(GDNS)

–0.3 20 V

AGND to GND –0.3 0.3 V

ISNS to VBUS –0.3 0.3 V

Sinking current (average)

CTL1, CTL2, CTL3, ENSRC 8 mA

GD 100 µA

DSCG 10 mA

Sinking current (transient, 50 ms pulse 0.25%

duty cycle)

DSCG 375 mA

Current sourcing

VTX Internally limited mA

CC1, CC2 Internally limited mA

VAUX 0 25 µA

Operating junction temperature range, T

–40 125 °C

Storage temperature, T

stg

–65 150 °C

(1) This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate

precautions. Failure to observe proper handling and installation procedures can cause damage.

(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(4) These results were passing limits that were obtained on an application-level test board. Individual results may vary based on

implementation. Surges per IEC61000-4-2, 1999 applied between CC1/CC2 and ground of TPS25740BEVM-741 and TPS25740BEVM-

741

7.2 ESD Ratings

(1)

VALUE UNIT

(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001

(2)

±2500

Charged-device model (CDM), per JEDEC specification JESD22-

C101

(3)

±1000

IEC

(4)

61000-4-2 contact discharge, CC1, CC2 ±8000

IEC

(4)

61000-4-2 air-gap discharge, CC1, CC2 ±15000

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