APower-AP30P10D.pdf
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AP30P10D
-100V P-Channel Enhancement Mode MOSFET
AP30P10D RVE1.1 永源微電子科技有限公司
1
Description
The AP30P10D uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
V
DS
= -100V I
D
=-30A
R
DS(ON)
<95mΩ @ V
GS
=10V (Type：68mΩ)
Application
Brushless motor
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP30P10D
TO-252-3L
AP30P10D XXX YYYY
2500
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±20
V
I
D
@T
C
=25℃
Continuous Drain Current, V
GS
@ -10V
1
-30
A
I
D
@T
C
=100℃
Continuous Drain Current, V
GS
@ -10V
1
-18
A
IDM
Pulsed Drain Current
2
-90
A
EAS
Single Pulse Avalanche Energy
3
157.2
mJ
IAS
Avalanche Current
-19
A
P
D
@T
C
=25℃
Total Power Dissipation
4
280
W
TSTG
Storage Temperature Range
-55 to 150
℃
T
J
Operating Junction Temperature Range
-55 to 150
℃
R
θ
JA
Thermal Resistance Junction-Ambient
1
62.5
℃/W
R
θ
JC
Thermal Resistance Junction-Case
1
2.3
℃/W
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