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轻,MeV级暗物质(DM)是一种令人兴奋的DM候选物,目前的实验无法检测到。 锗(Ge)检测器利用内部电荷放大技术对由杂质电离产生的电荷载流子进行检测,是一种有前途的新技术,具有实验灵敏度,可检测MeV级DM。 我们分析了信号形成,电荷产生,电荷内部放大以及直接检测MeV级DM粒子的预计灵敏度的物理机制。 我们介绍了一种新颖的Ge检测器的设计,该检测器在氦气温度(?4 K)下能够使DM冲击中的杂质电离。 借助较大的局部电场,可以将电离的激发加速到大于Ge带隙的动能,这时它们可以创建额外的电子-空穴对,从而产生内在放大作用,以实现1/3的超低能量阈值 0.1 eV用于检测MeV规模的低质量DM颗粒。 相应地,这样的Ge探测器与1千克年的暴露将对DM质量为10 MeV /的DM核横截面为¼5Â10 -45Âcm 2的高灵敏度。 c 2和DM质量为Â1 MeV / c 2的DM电子横截面为ÂÂÂÂÂÂÂÂÂÂÂ5ÂÂÂÂ10 -46Âcm 2。
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Eur. Phys. J. C (2018) 78:187
https://doi.org/10.1140/epjc/s10052-018-5653-z
Regular Article - Experimental Physics
Direct detection of MeV-scale dark matter utilizing germanium
internal amplification for the charge created by the ionization of
impurities
D.-M. Mei
1,2,a
, G.-J. Wang
1
,H.Mei
1
, G. Yang
1
,J.Liu
1
, M. Wagner
1
, R. Panth
1
, K. Kooi
1
, Y.-Y. Yang
1
,W.-Z.Wei
1
1
Department of Physics, The University of South Dakota, Vermillion, SD 57069, USA
2
School of Physics and Optoelectronic, Yangtze University, Jingzhou 434023, China
Received: 23 October 2017 / Accepted: 15 February 2018
© The Author(s) 2018. This article is an open access publication
Abstract Light, MeV-scale dark matter (DM) is an exciting
DM candidate that is undetectable by current experiments.
A germanium (Ge) detector utilizing internal charge ampli-
fication for the charge carriers created by the ionization of
impurities is a promising new technology with experimen-
tal sensitivity for detecting MeV-scale DM. We analyze the
physics mechanisms of the signal formation, charge creation,
charge internal amplification, and the projected sensitivity
for directly detecting MeV-scale DM particles. We present a
design for a novel Ge detector at helium temperature (∼4K)
enabling ionization of impurities from DM impacts. With
large localized E-fields, the ionized excitations can be accel-
erated to kinetic energies larger than the Ge bandgap at which
point they can create additional electron–hole pairs, produc-
ing intrinsic amplification to achieve an ultra-low energy
threshold of ∼ 0.1 eV for detecting low-mass DM parti-
cles in the MeV scale. Correspondingly, such a Ge detec-
tor with 1 kg-year exposure will have high sensitivity to a
DM-nucleon cross section of ∼ 5 × 10
−45
cm
2
at a DM
mass of ∼ 10 MeV/c
2
and a DM-electron cross section of
∼ 5 × 10
−46
cm
2
at a DM mass of ∼ 1MeV/c
2
.
1 Introduction
Observations from the 1930s [1] have led to the contem-
porary and shocking revelation that 96% of the matter and
energy in the universe neither emits nor absorbs electromag-
netic radiation [2,3]. Weakly Interacting Massive Particles
(WIMPs) [4] constitute a popular candidate for dark matter
(DM). These particles, with mass thought to be comparable
to heavy nuclei, have a feeble and extremely short range inter-
a
e-mail: [email protected]
action with atomic nuclei. While WIMPs appear to interact
with atomic nuclei very rarely, their collisions would cause
atoms to recoil at a velocity in the order of a thousand times
the speed of sound in air [5].
For over three decades, many experiments have conducted
searches for WIMPs using various targets [6–25]. These
experiments are all sensitive to WIMPs with masses greater
than a few GeV/c
2
. The best sensitivity for WIMPs masses
above 10 GeV/c
2
, with a minimum of 7.7 ×10
−47
cm
2
for 35
GeV/c
2
at 90% confidence level, is given by the most recent
results from XENON1T [23]. Despite great efforts have been
made, WIMPs remain undetected. More experiments will
soon come online [26–28]. The LZ experiment will push the
experimental sensitivity for WIMPs with masses greater than
10 GeV/c
2
very close to the boundary where neutrino induced
backgrounds begin to constrain the experimental sensitivity
[29,30].
In the past decade, light DM in the MeV-scale [31–34] has
risen to become an exciting DM candidate, even though its
low mass makes it unreachable by current experiments. The
detection of MeV-scale DM requires new detectors with an
extremely low-energy threshold (< 10 eV) since both elec-
tronic recoils and nuclear recoils induced by MeV-scale DM
are in the range of sub-eV to 100 eV [31]. Using the data
from the XENON10 experiment, the XENON Collaboration
was able to set the first experimental limit on the MeV-scale
DM detection [35]. More recently, Kadribasic et al. have
proposed a method for using solid state detectors with direc-
tional sensitivity to DM interactions to detect low-mass DM
[36]. CRESST has achieved a threshold of 20 eV with a small
prototype sapphire detector [37]. DAMIC has claimed a sen-
sitivity to ionization < 12 eV with Si CCDs and considered
their method to be able to reach 1.2 eV [38].
DM coupling to visible matter is assumed through weak
and gravitational interactions [39,40]. A common search
123
187 Page 2 of 12 Eur. Phys. J. C (2018) 78:187
channel is the elastic scattering between incoming DM par-
ticles and target nuclei. Current direct detection experiments
search for nuclear recoils with the lowest accessible nuclear
recoil energy being around 1 keV [7,8,17,20]. This corre-
sponds to DM with masses greater than 6 GeV/c
2
.ForMeV-
scale DM, the average nuclear recoil energy gained from an
elastic scattering is:
E
nr
= q
2
/2m
N
, (1)
which is the level of [31]:
E
nr
1 eV × (m
χ
/100 MeV )
2
(10 GeV /m
N
), (2)
where q ∼ m
χ
v is the momentum transferred, v ∼ 10
−3
c
is the DM velocity, c is the speed of light, m
χ
is the mass
of DM, and m
N
is the mass of a nucleus. As can be seen,
this nuclear recoil energy is in the range of ∼ 1 eV and
well below the lowest threshold achieved in existing direct
detection experiments.
On the other hand, coupling between the incoming DM
and the orbital electrons is also possible [31,33,34]. In this
case, the total energy available in the scattering between DM
and electrons can be larger [31]:
E
tot
m
χ
v
2
/2 50 eV × (m
χ
/100 MeV ). (3)
However, it is still in the level of ∼ 50 eV if m
χ
is 100
MeV/c
2
. Consequently, conventional detector technology
does not allow for the detection of DM much below the GeV
mass scale. Direct detection of MeV-scale DM requires new
detectors with threshold as low as sub-eV to maximize the
capability of searches.
A promising technology for sensitivity to MeV-scale DM
is a germanium (Ge) detector which utilizes internal charge
amplification for the charge carriers created by the ionization
of impurities. We describe the design of a novel Ge detec-
tor that develops ionization amplification technology for Ge
in which very large localized E-fields are used to accelerate
ionized excitations produced by particle interaction to kinetic
energies larger than the Ge bandgap at which point they can
create additional electron–hole (e–h) pairs, producing inter-
nal amplification. This amplified charge signal could then be
readout with standard high impedance JFET or HEMT [41]
based charge amplifiers. Such a system would potentially
be sensitive to single ionized excitations produced by DM
interactions with both nuclei and electrons. In addition, pur-
poseful doping of the Ge could lower the ionization threshold
by ∼×10 (∼ 0.1 eV), making the detector sensitive to 100
keV DM via electronic recoils.
2 The formation of signal
2.1 DM-nucleus and DM-electron elastic scattering
processes
The energy deposition between the incoming DM and a tar-
get nucleus or a bound electron through elastic scattering
can be calculated using the standard halo model [39,40]
assuming the velocity distribution of DM is approximately
Maxwellian, with v
rms
governed by the gravitational binding
and having a value 270 kms
−1
. The relative motion of the
solar system (v = 220 km s
−1
) through the DM halo is con-
sidered in the calculation. The energy deposition spectrum
arises due to kinematics of elastic scattering. In the center-
of-momentum frame, a DM particle scatters off a nucleus or
a bound electron through an angle θ, uniformly distributed
between 0 and 180
o
for the isotropic scattering that occurs
with zero-momentum transfer. The DM
s initial energy in
the laboratory frame can be expressed as: E
i
=m
χ
v
2
/2. The
nuclear recoil energy can be calculated as:
E
r
= E
i
×
4μ
2
χ N
m
χ
m
N
×
(1 − cos θ)
2
, (4)
where μ
χ N
is the DM-nucleus reduced mass, μ
χ N
=
m
χ
m
N
m
χ
+m
N
.
When a DM particle collides directly with a bound elec-
tron, exciting it to a higher energy level or an unbound state,
the calculation of electronic recoil energy is different from
that of a nuclear recoil [32]. Since electrons are in a bound
state, the electrons may have an arbitrarily high momentum
(albeit with low probability). During a collision between a
DM particle and a bound electron, the energy transferred to
the electron, ΔE
e
, can be related to the momentum lost by
the DM, q, via energy conservation [32]:
ΔE
e
= q · v −
q
2
2μ
χ N
. (5)
If one assumes an angle, α, between the momentum transfer
(q) and the velocity (v) of the DM particle, ΔE
e
can be
written as:
ΔE
e
= qvcos (α) −
q
2
2μ
χ N
. (6)
Taking into account a fact that ΔE
e
=
q
2
2Z
ef f
m
e
, the energy
transferred to electrons equals the squared momentum lost
by the DM particle divided by two times of the effective mass
of that atomic system, where m
e
is the mass of electron, then
Eq. 6 can be rewritten as:
ΔE
e
=
2
Z
ef f
m
e
v
2
cos
2
(α)
(1 +
Z
ef f
m
e
μ
χ N
)
2
, (7)
123
Eur. Phys. J. C (2018) 78:187 Page 3 of 12 187
Tabl e 1 Effective nuclear charges for Ge electron configuration
Electron configuration Z
ef f
1s 31.294
2s 23.365
2p 28.082
3s 17.790
3p 17.014
4s 8.044
3d 16.251
4p 6.780
Fig. 1 The relative event rate as a function of recoil energy for DM
with masses between 0.1 MeV/c
2
to 1 GeV/c
2
where Z
ef f
is the effective number of orbital electrons (also
called effective nuclear charge) that participate in the DM-
electron scattering, which would interact with the entire
atomic system. The value of Z
ef f
corresponding to the elec-
tron configuration, 1s
2
2s
2
2p
6
3s
2
3p
6
3d
10
4s
2
4p
2
, is given by
Clementi et al. [42,43], as shown in Table 1.
Utilizing the electron configuration of Ge and the values
of Z
ef f
in Table 1, the average value of Z
ef f
is determined to
be 18.989 for a Ge atom. Since an arbitrary-size momentum
transfer is possible, the largest allowed energy transfer is
found to be:
ΔE
e
≤
1
2
m
χ
v
2
. (8)
The likelihood of actually obtaining a large enough q to excite
an electron depends on the effective atomic number,
Z
ef f
,
and the incident angle of a DM particle.
With the standard halo model described above, the energy
deposition is simulated as shown in Fig. 1, which shows
the distributions of nuclear recoil energies induced by DM-
nucleus scattering and electronic recoil energies created by
DM-electron scattering with DM masses from 0.1 MeV/c
2
to1GeV/c
2
.
It is clear that the energy deposited by nuclear recoils is
mainly in the range of sub-eV to ∼100 eV. The dissipation
of such a small amount of energy in Ge is largely through
the emission of phonons. DM interacting with electrons can
lead to visible signals of ∼10 eV through the following chan-
nels: electron ionization and electronic excitation. Similar to
DM-nucleus scattering, the energy deposited by electronic
recoils is also in the range of sub-eV to ∼ 100 eV. Such a
small amount of energy is again largely dissipated through
the emission of phonons. Therefore, the detection of those
phonons is a major consideration for the design of the next
generation of Ge detectors.
2.2 The form of the detectable signature
The bandgap energy of Ge is 0.67 eV at room temperature
[44]. It increases slightly as temperature decreases [45]. The
band structure of Ge is an indirect bandgap, which means
that the minimum of conduction band and the maximum of
valance band lie at different momentum, k, values. When
an e–h pair is created in Ge, phonons must be involved to
conserve momentum [47]. Therefore, the average energy
expended per e–h pair in Ge at 77 K is ∼ 3 eV, much higher
than the bandgap energy of 0.73 eV [47] at the same temper-
ature.
Since the energy dissipation, induced by DM interactions
with a nucleus or an electron, is mainly released through
the emission of phonons, the energy of phonons (E
phonon
),
can be estimated through E
phonon
= hv
s
/a, where h is
the Planck constant, v
s
is the speed of sound in Ge, and
a (0.565 nm) is the lattice constant of Ge. The value of
the speed of sound in Ge depends on the polarization of
phonons and the orientation of Ge crystal. For a [100] Ge
crystal, v
s
=5.4× 10
3
m/s [49] for longitudinal acoustic
(LA) phonons and v
s
=3.58× 10
3
m/s for transverse acous-
tic (TA) phonons [50]. Therefore, E
phonon
can be 0.037 eV
for LA phonons and 0.026 eV for TA phonons, respectively.
These values agree with the early measurements made by
Brockhouse and Iyengar [51] and Others [52]. There are also
measured phonons in longitudinal optical (LO) and trans-
verse optical (TO) bench with energies up to 0.063 eV [51].
The energies of LA, TA, LO, and TO phonons are much less
than 3 eV required to generate an e–h pair at 77 K. Those
phonons are not capable of generating e–h pairs through exci-
tation of Ge atoms. Indirect detection of those phonons has
been demonstrated by CDMS [6], EDELWEISS [15] and
SuperCDMS [20] with threshold energy as low as ∼ 50 eV.
To access the large portion of the recoil energy spectra
shown in Fig. 1, a threshold energy of sub-eV is needed. This
can be obtained through excitation or ionization of impurities
naturally existing in a high-purity Ge detector with phonons.
The main impurities remaining in a high-purity p-type Ge
crystal after many passes of zone refining and crystal growth
123
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