Temperature effect on the submicron AlGaN/GaN Gunn diodes for te...

The wurtzite AlGaN/GaN Gunn diode with tristep-graded Al composition AlGaN as hot electron injector is simulated by using an improved negative differential mobility model of GaN. The results show that the oscillation mode of Gunn diode gradually shifts from dipole domain mode toward accumulation mode with increase in temperature, and the mode shift closely depends on the injector length. At the temperatures of 300-400 K, 0.6 and 0.4 mu m Gunn diodes normally generate the oscillation of dipole do