348 CHINESE OPTICS LETTERS / Vol. 7, No. 4 / April 10, 2009
Photosensitivity and photoluminescence of
Sn/Yb codoped silica optical fiber preform
Guanghui Chen (
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1∗
, Yigang Li (
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, Yaoji He (
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, Liying Liu (
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),
Lei Xu (
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2
, and Wencheng Wang (
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1
No. 23 Research Institute of China Electronics Technology Group Corporation, Shanghai 200437
2
State Key Laboratory for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering,
School of Information Science and Engineering, Fudan University, Shanghai 200433
∗
E-mail: chenguanghui@vip.163.com
Received September 22, 2008
Sn/Yb codoped silica optical fiber preform is prepared by the mo dified chemical vapor deposition (MCVD)
followed by the solution-doping method. Ultraviolet (UV) optical absorption, photoluminescence (PL)
spectra under 978-nm laser diode (LD) pumping, and refractive index change after exposure to 266-nm
laser pulses are obtained. There is only a little change in the PL spectra while a positive refractive ind ex
change up to 2×10
−4
is observed after 30-min exposure to 266-nm laser pulses. The results show that
both of the peculiar p hotosensitivity of Sn-doped silica and the gain property of Yb-doped silica fiber
are preserved in the Sn/Yb codoped silica optical fiber p reform. The experimental data suggest that the
photosensitivity of th e fiber preform under high energy density laser irradiation should be mainly due to
the bond-breaking of oxygen deficient defects, while under relatively low energy density laser irradiation,
the refractive index change probably originates from the photoconversion of optically active defects.
OCIS codes: 060.2310, 060.3738, 160.5335, 160.5690.
doi: 10.3788/COL20090704.0348.
Optical fiber gratings written in rare-earth-doped fibers
have potential applications in optical telecommunication
and sensor systems
[1−4]
, be c ause they combine signal
amplification and signal proces sing functions in the same
device. There is currently considerable interest in the
investigation of a fibe r with two main features , i.e., high
permanent photosensitivity and good gain property, in
certain wavelength windows
[5]
. Chiodini et al. reported
the Er
2
O
3
-SnO
2
-SiO
2
monolithic glasses prepared by
sol-gel route
[5]
. Their results show that a photosensi-
tivity comparable with that of only-tin-doped silica can
be obtained tog e ther with luminescence from the
4
I
13/2
level of the Er
3+
ion similar to that observed in erbium-
activated sol-gel silica. The ultraviolet (UV) induced
refractive index change of the samples follows nearly the
same kinetics observed in Er-free samples, which indi-
cates that the erbium activation does not influence the
structure responsible for the photorefractive process.
It has been recently found that tin-doped silica has
the same o rder of refractive index change with Ge- dop e d
silica while the tin concentration is two orders of magni-
tude lower than Ge concentration. At the same time, the
induced refractive index change has better thermal s ta-
bility in tin-doped silica than that of Ge-dope d silica
[6,7]
.
But the photosensitivity mechanism of tin-doped silica
has not been well understood yet.
In this letter, we present the results of our investigation
on the photosensitivity of Sn/Yb codoped s ilica optica l
fiber preform produced by modified chemical vapor depo-
sition (MCVD) followed by the solution-doping method.
The peculiar photosensitivity of Sn-doped silica and the
gain property of Yb-doped silica are both preserved in
this fiber preform. The results indicate that UV irradia-
tion has nearly no influence on its gain property when a
positive UV-induced refractive index change of 2 ×10
−4
is observed. The changes in UV absorption spectra sug-
gest that the process of photon-induced refractive index
change in the fiber should dep end on the energy density
of UV laser pulses.
In our study, the Sn/Yb codoped silica o ptica l fiber
preform was prepared by the MCVD followed by the
solution-doping method. Three layers of SiO
2
soot were
deposited at about 1400
◦
C after the deposition of one
layer of fused SiO
2
. The sample was then soaked in the
solution containing about 30 wt.-% SnCl
4
and 1 wt.-%
YbCl
3
at room temp e rature for about two hours. Then
the soaked soot layer was sintered into clear glas s at
about 1900
◦
C. The prefo rm was subsequently collapsed
into a solid rod with a diameter of a bo ut 10 mm in the
conventional way. Slices about 1.0 mm thick with a co re
diameter of about 1.5 mm were cut from the preform
and optically polished for absorption and Raman spectra
measurement. Both end surface s of the 150-mm-long
preform were optically polished for photoluminescence
(PL) measurement.
The 2 66-nm laser from the fourth harmonic of a Q-
switched Nd:YAG laser was used to ir radiate the preform.
The laser pulse width was 10 ns and the re petition ra te
was 10 Hz. Absorption spectra of the slices be fore and
after exposure to 266-nm laser pulses were measured us-
ing a UV-3101PC spectrophotometer (Shimadzu Corp.).
A pure silica substrate was used in the reference arm to
correct the Fresnel reflection. Both absorption changes
were o bta ined by subtracting the absorption spectr um
befo re irradiation from the absorption spectr a after irra -
diation, respectively.
Figure 1 shows the UV absorption sp e c trum of the
preform and its three spectral components, Peak 1 at
1671-7694/2009/040348-04
c
2009 Chinese Optics Letters
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