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SiC Diodes - Silicon Carbide Design Rules.pdf
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The close-to-ideal properties of novel silicon carbide Schottky diodes (thinQ!™), that can reach higher blocking voltages than the actual Silicon Schottky limit of 250V, are well suited for hard switching commutation. In order to maximize the benefit from these characteristics, a different design-i
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Application Note AN 2002-05
V1.0 May 2002
Silicon
Carbide
Schottky:
Novel Devices Require Novel Design
Rules
IFAT PMM
I. Zverev
H. Kapels
R. Rupp
M. Herfurth
Silicon
Carbide
Schottky:
Novel Devices Require Novel Design
Rules
2
Edition 2011-02-02
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© Infineon Technologies Austria AG 2011.
All Rights Reserved.
Attention please!
THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMEN-
TATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED
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(INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL
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AN 2002-05
Revision History: date (02-05) V1.0
Previous Version:
Subjects: Silicon Carbide Schottky: Novel Devices Require Novel Design Rules
Authors: I. Zverev, H. Kapels, R. Rupp, M. Herfurth
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will
help us to continuously improve the quality of this document. Please send your proposal (including a
reference to this document) to: Ilia.Zverev@infineon.com,
Silicon
Carbide
Schottky:
Novel Devices Require Novel Design
Rules
3
Table of contents
1 Abstract ........................................................................................................................................................ 4
2 Introduction .................................................................................................................................................. 4
3 Properties of Silicon Carbide ..................................................................................................................... 4
3.1 Dynamic characteristics of SiC Schottky diodes................................................................................ 4
4 Active Power Factor Correction (Boost Converter) ................................................................................. 5
4.1 Basics of PFC Boost .......................................................................................................................... 5
4.2 How to select the right current rated device ...................................................................................... 5
5 Conclusion ................................................................................................................................................. 16
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