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TI-LM25183-Q1.pdf
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TI-LM25183-Q1.pdf
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ADVANCEINFORMATION
Load Current (mA)
Efficiency (%)
0 200 400 600 800
60
65
70
75
80
85
90
95
D101
V
IN
= 6 V
V
IN
= 12 V
V
IN
= 24 V
V
IN
= 36 V
V
OUT
= 12 V
SW
FB
VIN
EN/UVLO
TC
GND
RSET
LM25183-Q1
C
OUT
C
IN
47 F
10 F
T
1
V
IN
= 4.5 V...42 V
1 : 1
D
FLY
R
FB
124 k:
D
Z
D
F
SS/BIAS
R
SET
12.1 k:
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本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SNVSBJ4
LM25183-Q1
ZHCSL45 –APRIL 2020
具具有有 65V、、2.5A 集集成成MOSFET 的的 LM25183-Q1 42V
IN
PSR 反反激激式式直直流流/直直
流流转转换换器器
1
1 特特性性
1
• 符合AEC-Q100 车规认证
– 器件温度等级 1:-40℃ 至 125℃ 的环境温度范
围
• 提供功能安全
– 可帮助进行功能安全系统设计的可用文档
• 专为可靠耐用的应用 设计
– 4.5V 至 42V 的宽输入电压范围,
– 稳定可靠的解决方案,只有一个组件穿过隔离层
– ±1.5% 的总输出稳压精度
– 可选 V
OUT
温度补偿
– 具有 –40°C 至 +150°C 的结温范围
• 通过集成技术减小解决方案尺寸,降低成本
– 集成 65V、0.11Ω 功率 MOSFET
– 无需光耦合器或变压器辅助绕组即可进行 V
OUT
稳压
• 高效率 PSR 反激运行
– MOSFET 在 BCM 模式下实现准谐振关断
– 具有单输出和多输出实施手段
• 超低的 EMI 传导和辐射信号
– 软开关可避免二极管反向恢复
– 根据标准要求进行了优化CISPR 25 5 类
• 使用 WEBENCH
®
电源设计器创建定制反激式稳压
器设计方案
2 应应用用
• 汽车 HEV/EV 动力总成系统
• AM 以下波段汽车车身电子装置
• 牵引逆变器:IGBT 和 SiC 栅极驱动器电源
3 说说明明
LM25183-Q1 是一款初级侧稳压 (PSR) 反激式转换
器,在 4.5V 至 42V 的宽输入电压范围内具有高效
率。隔离输出电压采样自初级侧反激式电压,因此,无
需使用光耦合器、电压基准或变压器的第三绕组进行输
出电压稳压。高集成度可实现简单可靠的高密度设计,
其中只有一个组件穿过隔离层。通过采用边界导电模式
(BCM) 开关,可实现紧凑的磁解决方案以及优于
±1.5% 的负载和线路调节性能。集成的 65V 功率
MOSFET 可提供高达 10W 的输出功率并提高应对线
路瞬变的余量。
LM25183-Q1 简化了隔离式直流/直流电源的实施,且
可通过可选 功能 优化目标终端设备的性能。该器件通
过一个电阻器来设置输出电压,同时使用可选的电阻器
通过抵消反激式二极管的压降热系数来提高输出电压精
度。其他 特性 包括内部固定或外部可编程软启动、可
实现更高效率的可选偏置电源连接、用于可调节线路
UVLO 的精密使能输入(带迟滞功能)、间断模式过
载保护和带自动恢复功能的热关断保护。
LM25183-Q1 转换器符合汽车 AEC-Q100 1 级标准,
并且采用引脚间距为 0.8mm 且具有可湿性侧面的 8 引
脚 WSON 封装。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
LM25183-Q1 WSON (8) 4.00mm × 4.00mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
典典型型应应用用 典典型型效效率率 (V
OUT
= 12V)
ADVANCEINFORMATION
2
LM25183-Q1
ZHCSL45 –APRIL 2020
www.ti.com.cn
Copyright © 2020, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 6
7 Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 15
8 Application and Implementation ........................ 16
8.1 Application Information............................................ 16
8.2 Typical Applications ................................................ 16
9 Power Supply Recommendations...................... 29
10 Layout................................................................... 30
10.1 Layout Guidelines ................................................. 30
10.2 Layout Examples................................................... 31
11 器器件件和和文文档档支支持持 ..................................................... 32
11.1 器件支持................................................................ 32
11.2 文档支持 ............................................................... 33
11.3 接收文档更新通知 ................................................. 33
11.4 支持资源................................................................ 33
11.5 商标 ....................................................................... 34
11.6 静电放电警告......................................................... 34
11.7 Glossary................................................................ 34
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 34
12.1 Package Option Addendum .................................. 35
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
日日期期 修修订订版版本本 说说明明
2020 年 4 月 * 初始发行版
ADVANCEINFORMATION
EN/UVLO
VIN
FB
GND
RSET
SS/BIAS
TC
SW
5
8
7
6
4
1
2
3
3
LM25183-Q1
www.ti.com.cn
ZHCSL45 –APRIL 2020
Copyright © 2020, Texas Instruments Incorporated
(1) P = Power, G = Ground, I = Input, O = Output
5 Pin Configuration and Functions
NGU Package
8-Pin WSON With Wettable Flanks
Top View
Pin Functions
PIN
I/O
(1)
DESCRIPTION
NO. NAME
1 SW P
Switch node that is internally connected to the drain of the N-channel power MOSFET. Connect
to the primary-side switching terminal of the flyback transformer.
2 FB I
Primary-side feedback pin. Connect a resistor from FB to SW. The ratio of the FB resistor to the
resistor at the RSET pin sets the output voltage.
3 VIN P/I
Input supply connection. Source for internal bias regulators and input voltage sensing pin.
Connect directly to the input supply of the converter with short, low impedance paths.
4 EN/UVLO I
Enable input and undervoltage lockout (UVLO) programming pin. If the EN/UVLO voltage is
below 1.1 V, the converter is in shutdown mode with all functions disabled. If the EN/UVLO
voltage is greater than 1.1 V and below 1.5 V, the converter is in standby mode with the internal
regulator operational and no switching. If the EN/UVLO voltage is above 1.5 V, the start-up
sequence begins.
5 SS/BIAS I
Soft start or bias input. Connect a capacitor from SS/BIAS to GND to adjust the output start-up
time and input inrush current. If SS/BIAS is left open, the internal 6-ms soft-start timer is
activated. Connect an external supply to SS/BIAS to supply bias to the internal voltage regulator
and enable internal soft start.
6 TC I
Temperature compensation pin. Tie a resistor from TC to RSET to compensate for the
temperature coefficient of the forward voltage drop of the secondary diode, thus improving
regulation at the secondary-side output.
7 RSET I
Reference resistor tied to GND to set the reference current for FB. Connect a 12.1-kΩ resistor
from RSET to GND.
8 GND G Analog and power ground. Ground connection of internal control circuits and power MOSFET.
ADVANCEINFORMATION
4
LM25183-Q1
ZHCSL45 –APRIL 2020
www.ti.com.cn
Copyright © 2020, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted)
(1)
MIN MAX UNIT
Input voltage
VIN to GND –0.3 45
V
EN/UVLO to GND –0.3 45
TC to GND –0.3 6
SS/BIAS to GND –0.3 14
FB to GND –0.3 45.3
FB to VIN –0.3 0.3
RSET to GND –0.3 3
Output voltage
SW to GND –1.5 70
V
SW to GND (20-ns transient) –3
Operating junction temperature, T
J
–40 150 °C
Storage temperature, T
stg
–55 150 °C
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per AEC Q100-002
HBM ESD Classification Level 2
(1)
±2000
V
Charged device model (CDM), per
AEC Q100-011
CDM ESD Classification Level C4B
All pins except 1,
4, 5, and 8
±500
Pins 1, 4, 5, and 8 ±750
6.3 Recommended Operating Conditions
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted)
MIN NOM MAX UNIT
V
IN
Input voltage 4.5 42 V
V
SW
SW voltage 65 V
V
EN/UVLO
EN/UVLO voltage 42 V
V
SS/BIAS
SS/BIAS voltage 13 V
T
J
Operating junction temperature –40 150 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
LM25183-Q1
UNITNGU (WSON)
8 PINS
R
ΘJA
Junction-to-ambient thermal resistance 41.3 °C/W
R
ΘJC(top)
Junction-to-case (top) thermal resistance 34.7 °C/W
R
ΘJB
Junction-to-board thermal resistance 19.1 °C/W
Ψ
JT
Junction-to-top characterization parameter 0.3 °C/W
Ψ
JB
Junction-to-board characterization parameter 19.2 °C/W
R
ΘJC(bot)
Junction-to-case (bottom) thermal resistance 3.2 °C/W
ADVANCEINFORMATION
5
LM25183-Q1
www.ti.com.cn
ZHCSL45 –APRIL 2020
版权 © 2020, Texas Instruments Incorporated
6.5 Electrical Characteristics
Typical values correspond to T
J
= 25°C. Minimum and maximum limits aaply over the full –40°C to 150°C junction
temperature range unless otherwise indicated. V
IN
= 12 V and V
EN/UVLO
= 2 V unless otherwise stated.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
I
SHUTDOWN
VIN shutdown current V
EN/UVLO
= 0 V 3 µA
I
ACTIVE
VIN active current V
EN/UVLO
= 2.5 V, V
RSET
= 1.8 V 260 375 µA
I
ACTIVE-BIAS
VIN current with BIAS connected V
SS/BIAS
= 5 V 25 50 µA
ENABLE AND INPUT UVLO
V
SD-FALLING
Shutdown threshold V
EN/UVLO
falling 0.3 V
V
SD-RISING
Standby threshold V
EN/UVLO
rising 0.8 1.1 V
V
UV-RISING
Enable threshold V
EN/UVLO
rising 1.45 1.5 1.53 V
V
UV-HYST
Enable voltage hysteresis V
EN/UVLO
falling 0.04 0.05 V
I
UV-HYST
Enable current hysteresis V
EN/UVLO
= 1.6 V 4.2 5 5.5 µA
FEEDBACK
I
RSET
RSET current R
RSET
= 12.1 kΩ 100 µA
V
RSET
RSET regulation voltage R
RSET
= 12.1 kΩ 1.191 1.21 1.224 V
V
FB-VIN1
FB to VIN voltage I
FB
= 80 µA –40 mV
V
FB-VIN2
FB to VIN voltage I
FB
= 120 µA 40 mV
SWITCHING FREQUENCY
F
SW-MIN
Minimum switching frequency 10 kHz
F
SW-MAX
Maximum switching frequency 350 kHz
t
ON-MIN
Minimum switch on-time 140 ns
DIODE THERMAL COMPENSATION
V
TC
TC voltage I
TC
= ± 10 µA, T
J
= 25°C 1.2 1.27 V
POWER SWITCHES
R
DS(on)
MOSFET on-state resistance I
SW
= 100 mA 0.11 Ω
SOFT-START AND BIAS
I
SS
SS ext capacitor charging current 5 µA
t
SS
Internal SS time 6 ms
V
BIAS-UVLO-
RISE
BIAS enable voltage V
SS/BIAS
rising 4.25 4.45 V
V
BIAS-UVLO-
HYST
BIAS UVLO hysteresis V
SS/BIAS
falling 150 mV
CURRENT LIMIT
I
SW-PEAK
Peak current limit threshold 2.25 2.5 2.77 A
THERMAL SHUTDOWN
T
SD
Thermal shutdown threshold T
J
rising 175 °C
T
SD-HYS
Thermal shutdown hysteresis 10 °C
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