IRFP460P
HEXFET
®
Power MOSFET
Third Generation HEXFET
®
s from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance
between pins to meet the requirements of most safety
specifications.
The solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
S
D
G
V
DSS
= 500V
R
DS(on)
= 0.27Ω
I
D
= 20A
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Isolated Central Mounting Hole
l Fast Switching
l Ease of Paralleling
Description
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 20
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 13 A
I
DM
Pulsed Drain Current 80
P
D
@T
C
= 25°C Power Dissipation 280 W
Linear Derating Factor 2.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 960 mJ
I
AR
Avalanche Current 20 A
E
AR
Repetitive Avalanche Energy 28 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.45
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient ––– 40
Thermal Resistance
01/17/01
www.irf.com 1
l Simple Drive Requirements
l Solder Plated for Reflowing
Maximum Reflow Temperature 230 (Time above 183 °C
should not exceed 100s) °C
TO-247AC
PD-93946A
