4gb-8gb-EMMC-MTFC4GACAJCN.pdf

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根据提供的文档信息，本文将对e·MMC™ Memory MTFC4GACAJCN-1M WT与MTFC8GAKAJCN-1M WT的主要特点、功能及其在电子设备中的应用进行详细介绍。 ### 一、产品概述 e·MMC™（嵌入式多媒体卡）Memory MTFC4GACAJCN-1M WT与MTFC8GAKAJCN-1M WT是Micron公司生产的一款嵌入式存储解决方案，主要应用于智能手机、平板电脑以及其他便携式电子设备中。该系列产品提供4GB与8GB两种容量选择，并采用先进的12信号接口设计，支持x1、x4以及x8 I/O模式，能够满足不同应用场景下的需求。 ### 二、主要技术特性 #### 1. 多媒体卡控制器与NAND闪存集成 e·MMC™ Memory MTFC4GACAJCN-1M WT与MTFC8GAKAJCN-1M WT集成了多媒体卡控制器和NAND闪存，这意味着它们可以作为一个完整的存储系统直接安装在主机板上，无需额外的外部控制器或闪存芯片，大大简化了设计流程并提高了整体系统的性能。 #### 2. 封装形式 采用153-ball FBGA封装形式，符合RoHS标准，即绿色环保包装。这种封装形式不仅有助于减少产品的总体尺寸，而且还确保了产品具有较高的可靠性和耐用性。 #### 3. 电源电压范围 - **VCC**：支持2.7至3.6V的工作电压范围。 - **VCCQ (双电压)**：支持1.65至1.95V以及2.7至3.6V两个工作电压范围。 这种宽泛的电压范围使得e·MMC™ Memory能够在多种不同的电源环境下稳定运行。 #### 4. 温度适应性 - **工作温度**：-25˚C 至 +85˚C - **存储温度**：-40˚C 至 +85˚C 这表明e·MMC™ Memory可以在极端温度条件下正常工作，适用于各种环境条件的应用场景。 #### 5. MMC 特定功能 e·MMC™ Memory支持JEDEC/MMC标准版本5.0，其中包括以下特性： - 高级12信号接口设计。 - 支持SDR/DDR模式，最高可达52MHz的时钟速度。 - 支持HS200/HS400模式。 - 实时时钟功能。 - 命令类支持：基本类、块读取类、块写入类等。 - 临时写保护。 - 高速启动操作。 - 睡眠模式。 - 受保护的内存块等功能。 #### 6. 其他功能 - 支持安全擦除和安全修剪。 - 支持硬件重置信号。 - 支持多个分区以及增强属性。 - 永久和开机时写保护。 - 高优先级中断。 - 背景操作。 - 可靠写入。 - 抛弃和清理功能。 - 扩展分区。 - 上下文ID。 #### 7. 后向兼容性 e·MMC™ Memory还支持与之前的MMC版本向后兼容，确保了与旧设备的无缝连接。 ### 三、错误校正与区块管理 e·MMC™ Memory内置了错误校正码(ECC)和区块管理功能，可以自动检测并纠正数据错误，确保数据的完整性和可靠性。 ### 四、性能与功耗 文档中还提到了MLC分区的顺序性能典型值，虽然具体数值未给出，但可以推测这些设备在读写速度方面有着不错的表现。此外，e·MMC™ Memory还优化了功耗管理，以适应移动设备对电池寿命的需求。 ### 结论 e·MMC™ Memory MTFC4GACAJCN-1M WT与MTFC8GAKAJCN-1M WT作为Micron公司的高质量嵌入式存储解决方案，不仅提供了强大的功能和性能，而且通过其广泛的兼容性和低功耗设计，成为移动设备制造商的理想选择。无论是从设计灵活性还是实际应用效果来看，e·MMC™ Memory都是值得信赖的选择。
e·MMC™ Memory
MTFC4GACAJCN-1M WT, MTFC8GAKAJCN-1M WT
Features
• MultiMediaCard (MMC) controller and NAND Flash
• 153-ball FBGA
(RoHS compliant, "green package")
• V
CC
: 2.7–3.6V
• V
CCQ
(dual voltage): 1.65–1.95V; 2.7–3.6V
• Temperature ranges
– Operating temperature: –25˚C to +85˚C
– Storage temperature: –40˚C to +85˚C
MMC-Specific Features
• JEDEC/MMC standard version 5.0-compliant
(JEDEC Standard No. JESD84-B50)
1
– Advanced 12-signal interface
– x1, x4, and x8 I/Os, selectable by host
– SDR/DDR modes up to 52 MHz clock speed
– HS200/HS400 modes
– Real-time clock
– Command classes: class 0 (basic); class 2 (block
read); class 4 (block write); class 5 (erase);
class 6 (write protection); class 7 (lock card)
– Temporary write protection
– Boot operation (high-speed boot)
– Sleep mode
– Replay-protected memory block (RPMB)
– Secure erase and secure trim
– Hardware reset signal
– Multiple partitions with enhanced attribute
– Permanent and power-on write protection
– High-priority interrupt (HPI)
– Background operation
– Reliable write
– Discard and sanitize
– Extended partitioning
– Context ID
Figure 1: Micron e·MMC Device
MMC controller
MMC
power
NAND Flash
power
MMC
interface
NAND Flash
MMC-Specific Features (Continued)
– Data TAG
– Packed commands
– Dynamic device capacity
– Backward compatible with previous MMC
– Cache
– Field firmware update (FFU)
– Device Health Report
– Sleep notification
– Power-off notification
• ECC and block management implemented
Note:
1. The JEDEC specification is available at
www.jedec.org/sites/default/files/docs/
JESD84-B50.pdf.
Micron Confidential and Proprietary
4GB, 8GB: e·MMC
Features
PDF: 09005aef86582cce
emmc_4_8GB_ps8225_v50_wt.pdf – Rev. D 2/16 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
e·MMC Performance and Current Consumption
Table 1: MLC Partition Sequential Performance
Condition
1
Typical Values (MB/s)
4GB 8GB
HS400
Write 14 22
Read 160 190
HS200
Write 14 22
Read 150 170
DDR 52
Write 14 20
Read 90 90
Note:
1. Bus in x8 I/O mode. Sequential access of 1MB chunk. Additional performance data, such as system perform-
ance on a specific application board, will be provided in a separate document upon customer request.
Table 2: MLC Partition Random Performance
Condition
1
Typical Values (IOPS)
4GB 8GB
Burst Sustained Burst Sustained
HS400
Write (Cache On) 2000 - 3500 500 - 2800 3500 - 5000 500 - 3500
Write (Cache Off) 1000 - 1300 400 - 1100 1000 - 1300 400 - 1100
Read n/a 3000 - 6000 n/a 3800 - 6500
HS200
Write (Cache On) 2000 - 3500 500 - 2800 3000 - 4800 500 - 3500
Write (Cache Off) 1000 - 1300 400 - 1100 1000 - 1300 400 - 1100
Read n/a 3000 - 6000 n/a 3500 - 6000
DDR 52
Write (Cache On) 2000 - 3000 500 - 2800 3000 - 4500 500 - 3500
Write (Cache Off) 1000 - 1300 400 - 1100 1000 - 1300 400 - 1100
Read n/a 2500 - 5000 n/a 3000 - 5000
Note:
1. Bus in x8 I/O mode. Random access of 4KB chunk over various spans (1GB to full card). Additional perform-
ance data, such as system performance on a specific application board, will be provided in a separate docu-
ment upon customer request.
Micron Confidential and Proprietary
4GB, 8GB: e·MMC
Features
PDF: 09005aef86582cce
emmc_4_8GB_ps8225_v50_wt.pdf – Rev. D 2/16 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 3: Current Consumption
Condition
1
Typical Values (I
CC
/I
CCQ
)
Unit4GB 8GB
HS400
Write 40/70 40/70 mA
Read 50/100 50/100 mA
HS200
Write 40/70 40/70 mA
Read 50/100 50/100 mA
DDR 52
Write 30/60 30/60 mA
Read 20/70 20/70 mA
Idle/Standby
Sleep 0/200 0/200 uA
Auto-Standby 35/230 35/230 uA
Note:
1. Bus in x8 I/O mode. V
CC
= 3.6V and V
CCQ
= 1.95V. 25°C. Measurements done as average RMS current con-
sumption. I
CCQ
in READ operation measurements with tester load disconnected.
Micron Confidential and Proprietary
4GB, 8GB: e·MMC
Features
PDF: 09005aef86582cce
emmc_4_8GB_ps8225_v50_wt.pdf – Rev. D 2/16 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Part Numbering Information
Micron
®
e·MMC memory devices are available in different configurations and densities.
Figure 2: e·MMC Part Numbering
MT FC -
Micron Technology
Product Family
FC = NAND Flash + controller
NAND Density
NAND Component
Controller ID
Production Status
Blank = Production
ES = Engineering sample
Operating Temperature Range
Special Options
Package Codes
xx
xx
xx
xx xx xx
All packages are Pb free
xx
Table 4: Ordering Information
Base Part Number Density Package Shipping
MTFC4GACAJCN-1M WT 4GB 153-ball VFBGA
11.5mm x 13.0mm x 1.0mm
Tray
Tape and reel
MTFC8GAKAJCN-1M WT 8GB 153-ball VFBGA
11.5mm x 13.0mm x 1.0mm
Tray
Tape and reel
Device Marking
Due to the size of the package, the Micron-standard part number is not printed on the top of the device. Instead,
an abbreviated device mark consisting of a 5-digit alphanumeric code is used. The abbreviated device marks are
cross-referenced to the Micron part numbers at the FBGA Part Marking Decoder site: www.micron.com/decoder.
Micron Confidential and Proprietary
4GB, 8GB: e·MMC
Features
PDF: 09005aef86582cce
emmc_4_8GB_ps8225_v50_wt.pdf – Rev. D 2/16 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

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