MAX14920-MAX14921（美信）资源-CSDN文库

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MAX14920-MAX14921 Analog Front-End Devices for High-Accuracy Battery Measurement MAX14920-MAX14921是美信公司推出的高accuracy的电池测量模拟前端设备，适用于工业电池备份系统、电信电池备份系统、能源存储包和电子交通能源包等领域。这些设备可以accurately地采样电池电压，并提供电平移位，以适应多种类型的电池 chemistry。功能特点： 1. 高accuracy：MAX14920-MAX14921设备具有±0.5mV的电池电压误差，适用于监控具有非常平坦的放电曲线的电池chemistry，如磷酸锂铁锂电池。 2. 同时采样：MAX14920-MAX14921设备可以同时采样所有电池电压，允许准确地确定电池的状态和内部阻抗。 3. 一致calibration：MAX14920-MAX14921设备具有自我校准功能，确保测量结果的准确性。 4. 集成诊断：MAX14920-MAX14921设备具有集成诊断功能，能够检测开路故障、短路故障、低电压报警和高电压报警等。 5. 高灵活性：MAX14920-MAX14921设备具有SPI接口，支持多种电池 chemistry和不同的应用场景。MAX14920支持12个电池，MAX14921支持16个电池。应用场景： 1. 工业电池备份系统：MAX14920-MAX14921设备适用于工业电池备份系统，确保电池的可靠性和长寿命。 2. 电信电池备份系统：MAX14920-MAX14921设备适用于电信电池备份系统，提供高accuracy的电池状态监控和故障诊断。 3. 能源存储包：MAX14920-MAX14921设备适用于能源存储包，提供高accuracy的电池状态监控和管理。 4. 电子交通能源包：MAX14920-MAX14921设备适用于电子交通能源包，提供高accuracy的电池状态监控和管理。技术参数： * 电池电压误差：±0.5mV *采样速率：同时采样所有电池电压 * 输入范围：+6V最小（3个电池） * 工作温度范围：-40°C to +85°C * 封装形式：64-pin TQFP（MAX14920），80-pin TQFP（MAX14921） MAX14920-MAX14921设备是高accuracy的电池测量模拟前端设备，适用于各种工业和消费电子应用场景，提供高accuracy的电池状态监控和管理。

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MAX14920/MAX14921

High-Accuracy 12-/16-Cell Measurement AFEs

19-6496; Rev 3; 3/15

Ordering Information appears at end of data sheet.

Functional Diagram appears at end of data sheet.

EVALUATION KIT AVAILABLE

General Description

The MAX14920/MAX14921 battery measurement analog

front-end devices accurately sample cell voltages and

provide level shifting for primary/secondary battery packs

up to 16 cells/+65V (max). The MAX14920 monitors up

to 12 cells, while the MAX14921 monitors up to 16 cells.

Both devices simultaneously sample all cell voltages,

allowing accurate state-of-charge and source-resistance

determination. All cell voltages are level shifted to ground

reference with unity gain, simplifying external ADC data

conversion.

The devices have a low-noise, low-offset amplifier that

buffers differential voltages of up to +5V, allowing moni-

toring of all common lithium-ion (Li+) cell technologies.

The resulting cell voltage error is Q0.5mV.

The devices’ high accuracy make them ideal for monitoring

cell chemistries with very flat discharge curves, such as

lithium-metal phosphate.

Passive-cell balancing is supported by external FET

drivers. Integrated diagnostics in the devices allow

open-wire detection and undervoltage/overvoltage

alarms. The devices are controlled by a daisy-chainable

SPI interface.

The MAX14920 is available in a 64-pin (10mm x 10mm)

TQFP package with an exposed pad. The MAX14921 is

available in an 80-pin (12mm x 12mm) TQFP package.

Both devices are specified over the -40°C to +85°C

extended temperature range.

Applications

Industrial Battery Backup Systems

Telecom Battery Backup Systems

Energy Storage Packs

e-Transportation Energy Packs

Benefits and Features

S High Accuracy

 ±0.5mV (max) Cell Voltage Error

Simultaneous Cell Voltage Sampling

Self-Calibration

S Integrated Diagnostics

 Open-Wire and Short Fault Detection

 Undervoltage/Overvoltage Warning

 Thermal Shutdown

S High Flexibility

 SPI Interface

 12-Cell and 16-Cell Versions

 +6V Minimum (3 Cells) Operation

 +0.5V to +4.5V Cell Voltage Range

 Integrated Cell-Balancing FET Drivers

 Integrated 5V LDO

S Low Power

 1µA Shutdown Mode

 1µA/10µA Cell Current Draw

For pricing, delivery, and ordering information, please contact Maxim Direct

at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com.

2Maxim Integrated

MAX14920/MAX14921

High-Accuracy 12-/16-Cell Measurement AFEs

(All voltages referenced to AGND.)

.........................................................................-0.3V to +70V

LDOIN .............................................. (V

- 0.3V) to (V

+ 0.3V)

...........................................................................-0.3V to +6V

........................................................................-0.3V to +5.5V

CV0, DGND ..........................................................-0.3V to +0.3V

SCLK, SDI, CS, EN ..................................................-0.3V to +6V

SDO, SAMPL ............................................... -0.3V to (V

+ 0.3V)

CV1 .......................................................................... -0.3V to +6V

CV2–CV12 .............................(V

(n* - 1)

- 0.3V)

to (V

+ 0.3V)

CT1–CT12 .................................... -0.3V

to (V

CV1

–V

CV12

+ 0.3V)

CB2–CB12 .......................................-0.3V

to (V

CV(n* - 1)

+ 0.3V)

CV2–CV16

(MAX14921 only) .............. (V

CV(m** - 1)

- 0.3V)

to (V

+ 0.3V)

CT1–CT16

(MAX14921 only) ......................-0.3V to (V

CV1–

CV16

+ 0.3V)

CB2–CB16

(MAX14921 only) .......................-0.3V

to (V

CV(m** - 1)

+ 0.3V)

BA1 ......................................................... -0.3V to (V

CV1

+ 0.3V)

BA2–BA12 .....(V

CV(n* - 1)

- 0.3V)

to min((V

CVn*

+ 0.3V) or +6V)

BA2–BA16 (MAX14921 only) ............(V

CV(m** - 1)

- 0.3V)

to min

((V

CVm**

+ 0.3V) or +6V)

AOUT, T1, T2, T3 ........................................-0.3V to (V

+ 0.3V)

Continuous Power Dissipation (T

= +70°C)

64-Pin TQFP-EP (derate 31.3mW/°C above +70°C)...2508mW

80-Pin TQFP (derate 23.3mW/°C above +70°C) ........1860mW

Operating Temperature Range .......................... -40NC to +85°C

Maximum Junction Temperature .....................................+150°C

Storage Temperature Range ............................ -65NC to +150°C

Lead Temperature (soldering, 10s) ................................+300°C

Soldering Temperature (reflow) ......................................+260°C

*n = 2–12

**m = 2–16

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-

tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

= +65V, DGND = AGND, V

= V

= +3.3V, V

= +5V, C

SAMPLE

= 1FF, T

= -40°C to +85°C, unless otherwise noted. Typical

values are at T

= +25°C.) (Note 2)

Junction-to-Ambient Thermal Resistance (q

)

64-Pin TQFP-EP..........................................................31.9°C/W

80-Pin TQFP ..................................................................43°C/W

Junction-to-Case Thermal Resistance (q

)

64-Pin TQFP-EP...............................................................1°C/W

80-Pin TQFP ....................................................................8°C/W

Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer

board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.

PACKAGE THERMAL CHARACTERISTICS (Note 1)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

POWER SUPPLIES

Supply Voltage V

+6 +65 V

Supply Current

P_OFF

EN = low or LOPW = 1 1

P_ON

EN = high 65 150

LDOIN Supply Voltage V

LDOIN

+6 +65 V

LDOIN Supply Current

LDOIN_OFF

EN = low, I

= 0A 75 125

LDOIN_ON

EN = high, I

= 0A 350 500

Analog Supply Voltage V

supply externally, V

= V

LDOIN

+4.75 +5 +5.25 V

Analog Supply Current

A_OFF

EN = low, V

= V

LDOIN

50 75

A_ON

EN = high, V

= V

LDOIN

350 450

Supply Voltage V

+1.62 +5.5 V

Supply Current I

All logic inputs static, held at logic-low

or logic-high

2.5 5 FA

5Maxim Integrated

MAX14920/MAX14921

High-Accuracy 12-/16-Cell Measurement AFEs

DC ELECTRICAL CHARACTERISTICS (continued)

= +65V, DGND = AGND, V

= V

= +3.3V, V

= +5V, C

SAMPLE

= 1FF, T

= -40°C to +85°C, unless otherwise noted. Typical

values are at T

= +25°C.) (Note 2)

Note 2: All devices are 100% production tested at T

= +25°C. Limits over the operating temperature range are guaranteed by design.

Note 3: Where n = 1–12 (MAX14920) and n = 1–16 (MAX14921).

Note 4: Output error V

O_ERR

is the difference between the input cell difference voltage (V

= V

CV(n)

- V

CV(n - 1)

) and the

output voltage V

AOUT

. Where n = 1–12 (MAX14920) and n = 1–16 (MAX14921). Output error depends on buffer ampli-

fier errors and parasitic capacitance charge injection error. Since parasitic capacitance error is PCB dependent, output

error is guaranteed by design for a sampling capacitor of 1FF and parasitic capacitance less than 2.5pF on CTn (see the

Measurement Accuracy section for a detailed explanation).

Note 5: Buffer amplifier self-calibrates its offset at power-up and every time it is requested. Due to possible thermal drift after

power-up phase, it is suggested to run self-calibration on a regular basis to get best performance

(see the Buffer Amplifier Offset Calibration section for a detailed explanation).

Note 6: Amplifier error is the sum of all errors including amplifier offset and gain error.

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Level-Shifting Delay Time t

LS_DELAY

Delay from SMPLB set to 1 or SAMPL

falling edge to shifting of all cell voltages

to ground and available for reading

25 50 Fs

AOUT Voltage-Droop Time t

DROOP

Droop to -1mV (Figure 2) 1 ms

T_ Settling Time t

Measured between T_ input selection

and AOUT settling to +1mV accuracy,

LOAD

= 100pF, SC2 = 1

5 Fs

T_ Turn-On Delay Time t

0.2 Fs

Settling Time t

VPS

Measured between V

/12 (MAX14920),

/16 (MAX14921) input selection and

AOUT, settling to 2.5%,

LOAD

= 100pF, SC3 = 1

25 60 Fs

Self-Calibration Time 8 ms

THERMAL DETECTION

Thermal Shutdown +140 °C

Thermal-Shutdown Hysteresis 15 °C

SPI TIMINGS (Figure 3)

SDI to SCLK Setup t

50 ns

SDI to SCLK Hold t

12 ns

SCLK to SDO Valid t

100 ns

CS Fall to SDO Enable t

100 ns

CS Rise to SDO Disable t

80 ns

CS Pulse Width t

CSW

50 ns

CS Fall to SCLK Rise Setup t

CSS

100 ns

CS Rise to SCLK Rise Hold t

CSH

0 ns

SCLK High Pulse Width t

65 ns

SCLK Low Pulse Width t

65 ns

SCLK Period t

208 ns

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