带遗忘因子的最小二层算法,可进行参数辨识，调节遗忘因子即可附matlab代码.zip

%% 对boost电路进行参数辨识 %% 所采用的的方法为：一次最小二乘法，递推最小二乘法，带遗忘因子的递推最小二乘法 %% 只讨论MOS内阻，电容ESR的情形 %% 各器件参数如下： % 输入电压E=10V，电感感值L=202uH，MOS管内阻Ron=0.22Ω； % 电解电容C=445uF，Rc=0.045Ω；负载电阻R=10Ω； % 驱动信号为20kHz,占空比0.5； % 采样频率为2MHz，即采样周期为5e-7秒（0.5us）； % save boost10to20_normal_RI0.4.mat i_ind swit u_dmos i_diode u_out; % i_ind = iL(:,2); % swit = pulse(:,2); % u_dmos = ud(:,2); % i_diode = id(:,2); % u_out = uo(:,2); %% 提取采样信号数据用于后续参数辨识 clc; clear all; close all; load buck_normal.mat; IL = il(245000:250000,2); Uo = uo(245000:250000,2); SW = pulse(245000:250000,2); %% theta的真实值 T = 1e-7; L = 125e-6; RL = 0.2; Ron = 0.08; E = 40; R = 1.2; C = 4700e-6; Rc = 0.08; UD=0.3; Rd=0.05; theta_real(1) = 1-T*(Rd+RL)/L; theta_real(2) = T*(Rd-Ron)/L; theta_real(3) = -T/L; theta_real(4) = E*T/L; theta_real(5) = -T*UD/L; % theta_real(1) = R*T*(L-RI*Rc*C)/(L*C*(Rc+R)); % theta_real(2) = 1-T/(C*(Rc+R)); % theta_real(3) = -Rc*R*T/(L*(Rc+R)); % theta_real(4) = Rc*R*E*T/(L*(Rc+R)); % theta的辨识个数 nu = 5; nnn = 1000; % 初始化 Theta = zeros(nu,1); % Initial Parameters P = 10^12 * eye(nu,nu); % Initial Covariance Matrix rou =0.95; Theta_1=zeros(nu,1); for j=2:nnn-1 Y(j) = IL(j); % phi = [IL(j-1) SW(j-1)*IL(j-1) Uo(j-1) SW(j-1) ]'; phi = [IL(j-1) SW(j-1)*IL(j-1) Uo(j-1) SW(j-1) 1-SW(j-1)]'; % phi(:,j) = [(1-SW(j-1))*IL(j-1) Uo(j-1) (1-SW(j-1))*Uo(j-1) (1-SW(j-1)) ]; K = P*phi/(rou^2+phi'*P*phi); Theta(:,j) = Theta_1 + K*(Y(j)-phi'*Theta_1); P = rou^2*P-K*phi'*P; Theta_1=Theta(:,j); end aaaa(:,1) = theta_real'; aaaa(:,2) = Theta(:,end); % Theta_abs = inv(phi*phi')*(phi)*Y'; % % % aaaa(:,1) = theta_real'; % aaaa(:,2) = Theta_abs; % % rou = 1; % for i = 2 : nnn-1 % K(:,i) = P*phi(:,i)/(rou^2+phi(:,i)'*P*phi(:,i)); % % Theta(:,i) = Theta(:,i-1) + K(:,i)*(Y(i)-phi(:,i)'*Theta(:,i-1)); % % P = rou^2*P-K(:,i)*phi(:,i)'*P; % % % Ron_est(i-1)=Theta(2,i)/Theta(3,i); % % RI_est(i-1)=(Theta(1,i)-1)/Theta(3,i); % % L_est(i-1)=-T/Theta(3,i); % end % % aaaa(:,1) = theta_real'; % aaaa(:,2) = Theta_abs; % aaaa(:,3) = Theta(:,end);