LP3401LT1G.pdf
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30V P-Channel Enhancement-Mode MOSFET
●APPLICATIONS
LP3401LT1G
1)Advanced trench process technology
2)High Density Cell Design For Ultra Low On-Resistance.
3)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
●FEATURES
1)V
DS =-30V
3)RDS(ON) < 80m (VGS = -
4.5V)
4)RDS(ON) < 120m (VGS = -
2.5V)
●DEVICE MARKING AND ORDERING INFORMATION
Device Marking
LP3401LT1G A1
LP3401LT1G A1
●MAXIMUM RATINGS(Ta = 25℃)
Symbol
Limits Unit
VDSS
-30 V
VGS
±12 V
T
A
= 25°C
-4.2
T
A
= 75°C
-3.5
Pulsed Drain Current IDM -30
A
T
A
= 25°C
1.4
T
A
= 75°C 1.00
T
J
, Tstg
–55 to +150 °C
●THERMAL CHARACTERISTICS (Ta = 25℃)
Symbol Typ. Max. Unit
Maximum Junction-to-Ambient 65 90
°C/W
Maximum Junction-to-Ambient 85 125
°C/W
Maximum Junction-to-Lead
R
θJL 43 60
°C/W
Steady-State
Steady-State
Parameter
Drain−to−Source Voltage
Shipping
3000/Tape&Reel
10000/Tape&Reel
Parameter
Gate−to−Source Voltage
Continuous Drain Current ID
A
Maximum Power Dissipation PD W
Junction and Storage Temperature Range
R
θJA
t ≤ 10s
LESHAN RADIO COMPANY, LTD.
Rev.A 1/5July,2015
SOT– 23 (TO–236AB)
D
S
G
3
1
2
1
2
3
2)RDS(ON) < 70mΩ (VGS = -10V)
2)RDS(ON) < 70m (VGS = - 10V)
Ω
Ω
Ω
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