SamsungNANDFLASH资源-CSDN文库

内存，FLASH

3星 · 超过75%的资源需积分: 20 191 浏览量 2011-03-21 09:18:22 上传评论收藏 913KB PDF 举报

资源推荐

资源详情

资源评论

FLASH MEMORY

Preliminary

K9G4G08U0A K9G4G08B0A

K9L8G08U1A

K9XXG08XXA

* Samsung Electronics reserves the right to change products or specification without notice.

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

www.DataSheet4U.com

FLASH MEMORY

Preliminary

K9G4G08U0A K9G4G08B0A

K9L8G08U1A

GENERAL DESCRIPTION

FEATURES

• Voltage Supply

- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V

- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V

• Organization

- Memory Cell Array : (512M + 16M) x 8bit

- Data Register : (2K + 64) x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (256K + 8K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 60µs(Max.)

- Serial Access : 30ns(Min.)

• Memory Cell : 2bit / Memory Cell

512M x 8 Bit / 1G x 8 Bit NAND Flash Memory

• Fast Write Cycle Time

- Program time : 800µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)

- Data Retention : 10 Years

• Command Register Operation

• Unique ID for Copyright Protection

• Package :

- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)

- K9G4G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9L8G08U1A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9G4G08B0A : MCP(TBD)

Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V

Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per-

formed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.

Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/out-

put as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition,

where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the

K9G4G08X0A′s extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out

algorithm. The K9G4G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and

other portable applications requiring non-volatility.

PRODUCT LIST

Part Number Vcc Range Organization PKG Type

K9G4G08B0A 2.5V ~ 2.9V

MCP(TBD)

K9G4G08U0A-P

2.7V ~ 3.6V

TSOP1

K9G4G08U0A-I

52ULGA

K9L8G08U1A-I

www.DataSheet4U.com

剩余43页未读，继续阅读

评论收藏

内容反馈

zhyg781029

2012-04-05

东西是不错，不过全部是硬件方面的
CyberARM

2013-06-13

芯片资料但不够全
chenliu1234567

2013-06-05

我还以为是程序，搞半天原来是芯片资料啊，不过看看也行！！

good591

粉丝: 0
资源: 3

Samsung NAND FLASH

最新资源

Samsung NAND FLASH

samsung nand flash

Samsung_NAND_FLASH命名规则

nandflash命名规则大全（三星，海力士，美光）.pdf

samsung nandflash命名规则及ID DATA

Samsung K9F4G08U0M.pdf

NAND FLASH

NAND_FLASH

NAND FLASH文件系统

NAND_FLASH笔记

解读NAND_FLASH

nand flash

三星Nand Flash数据手册

三星NAND FLASH 型号分解

三星 nandflash驱动程序

有关三星NAND FLASH的命名规则,和一个4G字节NAND FLASH的介绍

三星NANDFLASH 颗粒识别

NAND FLASH 256

Samsung-NAND-FLASH命名规则.pdf

（七）、NAND FLASH控制器

NAND FLASH 调研和选型

NAND FLASH 资料 1GBIT

NAND Flash

SAMSUNG推出首个30nm级64Gb NAND Flash

Samsung电子公司推出业界首个60nm 8Gb NAND闪存储器

最新资源

（七）、NAND　FLASH控制器