EN25B80 串行flash的datasheet
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This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
1
EN25B80
Rev. C, Issue Date: 2006
/
12
/
25
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 8 M-bit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
• High performance
- 75MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one
32-Kbyte, and fifteen 64-Kbyte sectors
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 300 to 800ms typical
- Chip erase time: 10 Seconds typical
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25B80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25B80 has twenty sectors including fifteen sectors of 64KB, one sector of 32KB, one sector of
16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single Sector at a
time or full chip erase operation. The EN25B80 can protect boot code stored in the small sectors for either
bottom or top boot configurations. The device can sustain a minimum of 100K program/erase cycles on
each sector.
EN25B80
8 Mbit Serial Flash Memory with Boot and Parameter Sectors
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