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TLP2362资料,包括引脚图,使用说明,线路图
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TLP2362资料,包括引脚图,使用说明,线路图.TLP2362是一种集电极开路输出型逆变器逻辑类型耦合器,以10Mbps的速度进行高速资料传输,特别适用于绝缘RS-422和RS-485(通讯485),以及其他传输信号
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TLP2362
1
Photocouplers Infrared LED & Photo IC
TLP2362
TLP2362
TLP2362
TLP2362
Start of commercial production
2011-05
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Factory Automation (FA)
• Plasma Display Panels (PDPs)
• Measuring Instruments
2.
2.
2.
2. General
General
General
General
The Toshiba TLP2362 consists of a high-output infrared LED coupled with integrated high gain, high-speed
photodetectors. The TLP2362 guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. It is
housed in the SO6 package. The TLP2362 has an internal Faraday shield that provides a guaranteed common-
mode transient immunity of ±20 kV/µs.
3.
3.
3.
3. Features
Features
Features
Features
(1) Inverter logic type (open collector output)
(2) Package: SO6
(3) Operating temperature: -40 to 125
(4) Supply voltage: 2.7 to 5.5 V
(5) Data transfer rate: 10 MBd (typ.) (NRZ)
(6) Threshold input current: 5.0 mA (max)
(7) Supply current: 4 mA (max)
(8) Common-mode transient immunity: ±20 kV/µs (min)
(9) Isolation voltage: 3750 Vrms (min)
(10) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
(Note 1)
(Note 1)
(Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4)
Option (V4)
Option (V4)
Option (V4).
4.
4.
4.
4. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
11-4L1S
1: Anode
3: Cathode
4: GND
5: V
O
(output)
6: V
CC
2019-11-26
Rev.8.0
©2016-2019
Toshiba Electronic Devices & Storage Corporation
TLP2362
2
5.
5.
5.
5. Internal Equivalent Circuit (Note)
Internal Equivalent Circuit (Note)
Internal Equivalent Circuit (Note)
Internal Equivalent Circuit (Note)
Note: A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
6.
6.
6.
6. Principle of Operation
Principle of Operation
Principle of Operation
Principle of Operation
6.1.
6.1.
6.1.
6.1. Truth Table
Truth Table
Truth Table
Truth Table
Input
H
L
LED
ON
OFF
Output
L
H
6.2.
6.2.
6.2.
6.2. Mechanical Parameters
Mechanical Parameters
Mechanical Parameters
Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
2019-11-26
Rev.8.0
©2016-2019
Toshiba Electronic Devices & Storage Corporation
TLP2362
3
7.
7.
7.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
LED
Detector
Common
Characteristics
Input forward current
Input forward current derating
Input forward current (pulsed)
Input forward current derating
(pulsed)
Peak transient input forward
current
Peak transient input forward
current derating
Input power dissipation
Input power dissipation
derating
Input reverse voltage
Output current
Output voltage
Supply voltage
Output power dissipation
Output power dissipation
derating
Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(T
a
≥ 110 )
(T
a
≥ 110 )
(T
a
≥ 110 )
(T
a
≥ 110 )
(T
a
≥ 110 )
(10 s)
(AC, 60 s, R.H. ≤ 60 %)
Symbol
I
F
∆I
F
/∆T
a
I
FP
∆I
FP
/∆T
a
I
FPT
∆I
FPT
/∆T
a
P
D
∆P
D
/∆T
a
V
R
I
O
V
O
V
CC
P
O
∆P
O
/∆T
a
T
opr
T
stg
T
sol
BV
S
Note
(Note 1)
(Note 2)
(Note 3)
Rating
25
-0.67
40
-1.0
1
-25
40
-1.0
5
25
6
6
60
-1.5
-40 to 125
-55 to 125
260
3750
Unit
mA
mA/
mA
mA/
A
mA/
mW
mW/
V
mA
V
mW
mW/
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 1 ms, duty = 50 %
Note 2: Pulse width (PW) ≤ 1 µs, 300 pps
Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
8.
8.
8.
8. Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
CC
T
opr
Note
(Note 1)
(Note 2)
(Note 2)
Min
7.5
0
2.7
-40
Typ.
3.3/5.0
Max
14
0.8
5.5
125
Unit
mA
V
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note: A ceramic capacitor (0.1 µF) should be connected between pin 4 and pin 6 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5 µs.
Note 2: Denotes the operating range, not the recommended operating condition.
2019-11-26
Rev.8.0
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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