没有合适的资源?快使用搜索试试~ 我知道了~
晶体管光耦输出芯片TLP521使用手册
需积分: 48 20 下载量 57 浏览量
2015-09-30
16:13:00
上传
评论
收藏 214KB PDF 举报
温馨提示
晶体管光耦输出芯片TLP521使用手册 让你更熟练的使用该芯片完成设计
资源推荐
资源详情
资源评论
TLP521−1,TLP521−2,TLP521−4
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP521−1,TLP521−2,TLP521−4
Programmable Controllers
AC/DC−Input Module
Solid State Relay
The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP521−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP521−4 provides four isolated channels in a
sixteen plastic DIP package.
• Collector−emitter voltage: 55 V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 2500 Vrms (min)
• UL recognized
made in Japan: UL1577, file No. E67349
made in Thailand: UL1577, file No. E152349
Pin Configurations
(top view)
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
TLP521-2
1
2 7
8
3
4 5
6
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
: Anode
: Cathode
: Emitter
: Collector
TLP521-4
5
6 11
12
7
8
9
10
1
2
15
16
3
4
13
14
TLP521-1
1
2 3
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TOSHIBA 11−5B2
Weight: 0.26 g (typ.)
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
TOSHIBA 11−20A3
Weight: 1.1 g (typ.)
Unit in mm
TLP521−1,TLP521−2,TLP521−4
2007-10-01
2
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Characteristic Symbol
TLP521−1
TLP521−2
TLP521−4
Unit
Forward current I
F
70 50 mA
Forward current derating ΔI
F
/°C −0.93 (Ta ≥ 50°C) −0.5 (Ta ≥ 25°C) mA /°C
Pulse forward current I
FP
1 (100μ pulse, 100pps) A
Reverse voltage V
R
5 V
LED
Junction temperature T
j
125 °C
Collector−emitter voltage V
CEO
55 V
Emitter−collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector power dissipation
(1 circuit)
P
C
150 100 mW
Collector power dissipation
derating (1 circuit Ta ≥ 25°C)
ΔP
C
/°C −1.5 −1.0 mW /°C
Detector
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Operating temperature range T
opr
−55~100 °C
Lead soldering temperature T
sol
260 (10 s) °C
Total package power dissipation P
T
250 150 mW
Total package power dissipation
derating (Ta ≥ 25°C)
ΔP
T
/°C −2.5 −1.5 mW /°C
Isolation voltage BV
S
2500 (AC, 1min., R.H.≤ 60%) (Note 1)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage V
CC
― 5 24 V
Forward current I
F
― 16 25 mA
Collector current I
C
― 1 10 mA
Operating temperature T
opr
−25
― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
剩余8页未读,继续阅读
资源评论
Sir_Loong
- 粉丝: 1
- 资源: 4
上传资源 快速赚钱
- 我的内容管理 展开
- 我的资源 快来上传第一个资源
- 我的收益 登录查看自己的收益
- 我的积分 登录查看自己的积分
- 我的C币 登录后查看C币余额
- 我的收藏
- 我的下载
- 下载帮助
最新资源
资源上传下载、课程学习等过程中有任何疑问或建议,欢迎提出宝贵意见哦~我们会及时处理!
点击此处反馈
安全验证
文档复制为VIP权益,开通VIP直接复制
信息提交成功