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TLP521，光耦

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TLP521−1,TLP521−2,TLP521−4

2007-10-01

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP521−1,TLP521−2,TLP521−4

Programmable Controllers

AC/DC−Input Module

Solid State Relay

The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode.

The TLP521−2 offers two isolated channels in an eight lead plastic DIP

package, while the TLP521−4 provides four isolated channels in a

sixteen plastic DIP package.

• Collector−emitter voltage: 55 V (min)

• Current transfer ratio: 50% (min)

Rank GB: 100% (min)

• Isolation voltage: 2500 Vrms (min)

• UL recognized

made in Japan: UL1577, file No. E67349

made in Thailand: UL1577, file No. E152349

Pin Configurations

(top view)

1, 3 : Anode

2, 4 : Cathode

5, 7 : Emitter

6, 8 : Collector

TLP521-2

2 7

4 5

1, 3, 5, 7

2, 4, 6, 8

9, 11, 13, 15

10, 12, 14, 16

: Anode

: Cathode

: Emitter

: Collector

TLP521-4

6 11

TLP521-1

2 3

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

TOSHIBA 11−5B2

Weight: 0.26 g (typ.)

TOSHIBA 11−10C4

Weight: 0.54 g (typ.)

TOSHIBA 11−20A3

Weight: 1.1 g (typ.)

Unit in mm

TLP521−1,TLP521−2,TLP521−4

2007-10-01

Absolute Maximum Ratings

(Ta = 25°C)

Rating

Characteristic Symbol

TLP521−1

TLP521−2

TLP521−4

Unit

Forward current I

70 50 mA

Forward current derating ΔI

/°C −0.93 (Ta ≥ 50°C) −0.5 (Ta ≥ 25°C) mA /°C

Pulse forward current I

1 (100μ pulse, 100pps) A

Reverse voltage V

5 V

LED

Junction temperature T

125 °C

Collector−emitter voltage V

CEO

55 V

Emitter−collector voltage V

ECO

7 V

Collector current I

50 mA

Collector power dissipation

(1 circuit)

150 100 mW

Collector power dissipation

derating (1 circuit Ta ≥ 25°C)

ΔP

/°C −1.5 −1.0 mW /°C

Detector

Junction temperature T

125 °C

Storage temperature range T

stg

−55~125 °C

Operating temperature range T

opr

−55~100 °C

Lead soldering temperature T

sol

260 (10 s) °C

Total package power dissipation P

250 150 mW

Total package power dissipation

derating (Ta ≥ 25°C)

ΔP

/°C −2.5 −1.5 mW /°C

Isolation voltage BV

2500 (AC, 1min., R.H.≤ 60%) (Note 1)

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted

together.

Recommended Operating Conditions

Characteristic Symbol Min Typ. Max Unit

Supply voltage V

― 5 24 V

Forward current I

― 16 25 mA

Collector current I

― 1 10 mA

Operating temperature T

opr

−25

― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

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