STB55NF06L-VB N沟道TO263封装MOS管
本文档详细介绍STB55NF06L-VB N沟道TO263封装MOS管的特性、绝对最大_ratings、热阻抗 Ratings、thermal resistance Ratings、产品概要和规格。
特性:
STB55NF06L-VB是一种N沟道TO263封装MOS管,具有175°C的junction temperatura,适合高温应用。该MOS管的TrenchFET® Power MOSFET结构可以提供低/Gate-source电压和高电流density。
绝对最大_ratings:
该MOS管的绝对最大_ratings包括:
* Gate-Source Voltage:±20V
* Continuous Drain Current:ID = 75A(TJ = 175°C)
* Pulsed Drain Current:IDM = 200A(TJ = 175°C)
* Continuous Source Current(Diode Conduction):IS = 50A
* Avalanche Current:IAS = 50A
* Single Avalanche Energy(Duty Cycle ≤ 1 %):L = 0.1 mH,EAS = 125mJ
* Maximum Power Dissipation:PD = 136W(TC = 25°C)
* Operating Junction and Storage Temperature Range:TJ, Tstg = -55 to 175°C
热阻抗 Ratings:
该MOS管的热阻抗 Ratings包括:
* Maximum Junction-to-Ambient(at ≤ 10 sec):RthJA = 15°C/W
* Steady State:RthJA = 40°C/W
* Maximum Junction-to-Case:RthJC = 0.85°C/W
产品概要:
STB55NF06L-VB是一种N沟道TO263封装MOS管,具有60V的Drain-Source电压和11mΩ的On-State Resistance。该MOS管适合高温和高电流应用。
规格:
该MOS管的规格包括:
* Static Drain-Source Breakdown Voltage:VDS = 60V(VGS = 0 V, ID = 250 µA)
* Gate Threshold Voltage:VGS(th) = 1.3V(VDS = VGS, ID = 250 µA)
* Gate-Body Leakage:IGSS = ± 100nA(VDS = 0 V, VGS = ± 20 V)
* Zero Gate Voltage Drain Current:IDSS = 1µA(VDS = 60 V, VGS = 0 V)
* On-State Drain Current:ID(on) = 75A(VDS = 5 V, VGS = 10 V)
STB55NF06L-VB N沟道TO263封装MOS管是一种高性能、高温和高电流的MOS管,适合各种高功率电子设备的应用。