JEDEC
STANDARD
Power and Temperature Cycling
JESD22-A105D
(Revision of JESD22-A105C, January 2004, Reaffirmed January 2011)
JANUARY 2020
JEDEC SOLID STATE TECHNOLOGY ASSOCIATION
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JEDEC Standard No. 22-A105D
Page 1
Test Method A105D
(Revision of A105C)
TEST METHOD A105D
POWER AND TEMPERATURE CYCLING
(From JEDEC Board Ballot JCB-19-24, formulated under the cognizance of the JC-14.1
Subcommittee on Reliability Test Methods for Packaged Devices.)
1 Scope
This test method applies to semiconductor devices that are subjected to temperature
excursions and required to power on and off during all temperatures. The power and
temperature cycling test is performed to determine the ability of a device to withstand
alternate exposures at high and low temperature extremes with operating biases
periodically applied and removed. It is intended to simulate worst case conditions
encountered in typical applications.
The power and temperature cycling test is considered destructive. It is intended for
device qualification.
2 Terms and definitions
2.1 Temperature cycle time
Time between one high temperature extreme to the next, or from one low temperature
extreme to the next, for a given sample; see Figure 1.
2.2 Ramp rate
The rate of temperature increase or decrease per unit of time for the sample(s). Ramp
rate should be measured for the linear portion of the profile curve, which is generally the range
between 10% and 90% of the test condition temperature range; see Figure 1. Note:
Ramp rate can be load dependent and should be verified for the load being tested.
2.3 Dwell time
The amount of time the sample temperature has exceeded the specified temperature,
either the high or the low temperature; see Figure 1.
2.4 Power cycle time
Time between one power on to the next, or from one power off to the next, for a given
sample; see Figure 1.