AC7K325核心板原理图-2019-12-18.pdf
FPGA K7核心板原理图,非常不错的资料
Class E论文,非常经典,值得一看。 Abstract — This paper describes the design and fabrication of a highly efficient switching-mode Class-E Doherty power amplifier using gallium nitride (GaN) highelectron mobility transistor (HEMT) for S-band radar applications. Measured results of the Doherty amplifier show power-added efficiency (PAE) and drain efficiency of 62.6% and 73.1% at 37 dBm of 6 dB output back-off point from saturated output power at 2.85 GHz, compared with PAE and drain efficiency of 42.9% and 44.7% for the case of balanced amplifier. It was found that PAE was improved by 19.7% by adopting the Doherty efficiency enhancement technique.
国外机器学校教程, Introduction, Regression Analysis, and Gradient Descent
红牛开发板光盘\实验例程\红牛部分测试程序(新)\红牛开发板 NAND和SD卡(SDIO)模拟U盘程序for_128M