SIDC50D60C8 英飞凌芯片 INFINEON 中文版规格书手册.pdf
需积分: 5 173 浏览量
2023-07-17
09:46:32
上传
评论
收藏 55KB PDF 举报
SIDC50D60C8
Edited by INFINEON Technologies, IMM PSD, L4032M, Edition 1.2, 08.07.10
Fast switching diode chip in Emitter Controlled 3 -Technology
This chip is used for:
• Power module
Features:
• 600V Emitter Controlled 3 technology
70 µm chip
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
Applications:
• Drives
A
C
Chip Type V
R
I
F
Die Size Package
SIDC50D60C8
600V 200A 9.2 x 5.44 mm
2
sawn on foil
Mechanical Parameters
Raster size 9.2 x 5.44
Area total 50.05
Anode pad size 8.58 x 4.82
mm
2
Thickness 70 µm
Wafer size 200 mm
Max. possible chips per wafer 520
Passivation frontside Photoimide
Pad metal 3200 nm AlSiCu
Backside metal
Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond Electrically conductive glue or solder
Wire bond
Al, ≤500µm
Reject ink dot size
∅ 0.65mm; max 1.2mm
Recommended storage environment
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
资源评论
