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Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0

www.infineon.com 2022-12-21

IGO60R042D1

600V CoolGaN™ enhancement-mode Power Transistor

Features

 Enhancement mode transistor – Normally OFF switch

 Ultra fast switching

 No reverse-recovery charge

 Capable of reverse conduction

 Low gate charge, low output charge

 Superior commutation ruggedness

 Qualified for industrial applications according to JEDEC

Standards (JESD47 and JESD22)

Benefits

 Improves system efficiency

 Improves power density

 Enables higher operating frequency

 System cost reduction savings

 Reduces EMI

Applications

Industrial, telecom, datacenter SMPS based on the half-bridge topology

(half-bridge topologies for hard and soft switching such as Totem pole PFC,

high frequency LLC).

For other applications: review CoolGaN™ reliability white paper and contact

Infineon regional support

Table 1 Key Performance Parameters at T

= 25 °C

Table 2 Ordering Information

Parameter

Value

Unit

DS,max

600

DS(on),max

Ω

G,typ

8.8

D,pulse

oss

@ 400

Type / Ordering Code Package Marking Related links

IGO60R042D1 PG-DSO-20-85 60R042D1 see Appendix A

Gate 9, 10

Drain 13,14,15,16,17,18

Kelvin Source 8

Source 1,2,3,4,5,6,7, heatslug

not connected 11,12,19,20

Final Data Sheet 3 Rev. 2.0

2022-12-21

IGO60R042D1

600V CoolGaN™ enhancement

mode Power Transistor

1 Maximum ratings

at T

= 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor

lifetime. For further information, contact your local Infineon sales office.

Table 3 Maximum ratings

All devices are 100% tested at I

= 19.6 mA to assure V

≥ 800 V

Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation

Limits derived from product characterization, parameter not measured during production

Ensure that average gate drive current, I

G,avg

is ≤ 64 mA. Please see figure 27 for I

G,avg

, I

G,pulse

and I

details

Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application

We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for

details

Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Drain source voltage, continuous

DS,max

- - 600 V

= 0 V

Drain source destructive breakdown

voltage

DS,bd

800 - - V

= 0 V, I

= 19.6 mA

Drain source voltage, pulsed

DS,pulse

750

650

= 25 °C; V

≤ 0 V; ≤1 hour

of total time

= 125 °C, V

≤ 0 V; ≤1 hour

of total time

Switching surge voltage, pulsed

DS,surge

- - 750 V DC bus voltage = 700 V; turn

off V

DS,pulse

= 750 V; turn on

D,pulse

= 43 A; T

= 105 °C;

f ≤ 100 kHz, t ≤ 100 secs (10

million pulses)

Continuous current, drain source I

- - 19 A T

= 125 °C; T

= T

j, max

Pulsed current, drain source

3 4

D,pulse

- - 90 A T

= 25 °C; I

= 83.8 mA;

See Figure 3;

Pulsed current, drain source

4 5

D,pulse

- - 45 A T

= 125 °C; I

= 83.8 mA;

See Figure 4;

Gate current, continuous

4 5 6

G,avg

- - 64 mA T

= -55 °C to 150 °C;

Gate current, pulsed

4 6

G,pulse

- - 3200 mA T

= -55 °C to 150 °C;

PULSE

= 50 ns, f=100 kHz

Gate source voltage, continuous

-10 - - V T

= -55 °C to 150 °C;

Gate source voltage, pulsed

GS,pulse

-25 - - V T

= -55 °C to 150 °C;

PULSE

= 50 ns, f = 100 kHz;

open drain

Power dissipation P

tot

- - 250 W

= 25 °C

Operating temperature T

-55 - 150 °C

Storage temperature T

stg

- 150 °C Max shelf life depends on

storage conditions.

Drain-source voltage slew-rate dV/dt 200 V/ns

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