IRFR24N15D英飞凌芯片 INFINEON 中文版规格书手册.pdf
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www.irf.com 1
09/22/10
IRFR24N15DPbF
IRFU24N15DPbF
HEXFET
®
Power MOSFET
Absolute Maximum Ratings
Notes through ,* are on page 10
l High frequency DC-DC converters
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
V
DSS
R
DS(on)
max I
D
150V 95mΩ 24A
D-Pak
IRFR24N15DPbF
I-Pak
IRFU24N15DPbF
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 24
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 17 A
I
DM
Pulsed Drain Current 96
P
D
@T
C
= 25°C Power Dissipation 140 W
Linear Derating Factor 0.92 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 4.9 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.1
R
θJA
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
PD - 95370B
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