BSZ040N04LS G
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel; Logic level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
40 A
V
GS
=10 V, T
C
=100 °C
40
V
GS
=4.5 V, T
C
=25 °C
40
V
GS
=4.5 V,
T
C
=100 °C
40
V
GS
=10 V, T
A
=25 °C,
R
thJA
=60 K/W
2)
18
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
160
Avalanche current, single pulse
4)
I
AS
T
C
=25 °C
20
Avalanche energy, single pulse
E
AS
I
D
=20 A, R
GS
=25 Ω
130 mJ
Gate source voltage
V
GS
±20 V
Value
1)
J-STD20 and JESD22
V
DS
40 V
R
DS(on),max
4.0
mΩ
I
D
40 A
Product Summary
Type Package Marking
BSZ040N04LS G PG-TSDSON-8 040N04L
PG-TSDSON-8
Rev. 1.3 page 1 2009-11-05
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