没有合适的资源?快使用搜索试试~ 我知道了~
IDL08G65C5 INFINEON 英飞凌 电子元器件芯片.pdf
需积分: 5 0 下载量 68 浏览量
2023-06-07
11:25:08
上传
评论
收藏 729KB PDF 举报
温馨提示
试读
11页
IDL08G65C5 INFINEON 英飞凌 电子元器件芯片
资源推荐
资源详情
资源评论
Power Management & Multimarket
SiC
Silicon Carbide Diode
Final Data Sheet
Rev2.1, 2016-04-19
5
th
Generation thinQ!
TM
650V SiC Schottky Diode
IDL08G65C5
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet 2 Rev. 2.1, 2016-04-19
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Breakdown voltage tested at 18 mA
2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1 Key Performance Parameters
Parameter
Value
Unit
V
DC
650
V
Q
C
; V
R
=400V
13
nC
E
C
; V
R
=400V
2.9
µJ
I
F
@ T
C
< 150°C
8
A
Table 2 Pin Definition
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
n.c.
n.c.
A
A
C
Type / ordering Code
Package
Marking
IDL08G65C5
PG-VSON-4
D0865C5
Related Links
http://www.infineon.com/sic
ThinPAK Webpage
ThinPAK Application Note
IDL08G65C5
5
th
Generation thinQ!™ SiC Schottky Diode
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
ThinPAK 8x8
Bottom view
3,4
5
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDL08G65C5
Table of contents
Final Data Sheet 3 Rev. 2.1, 2016-04-19
Table of Contents
1 Description .......................................................................................................................................... 2
2 Maximum ratings ................................................................................................................................ 4
3 Thermal characteristics ..................................................................................................................... 4
4 Electrical characteristics ................................................................................................................... 5
5 Electrical characteristics diagrams .................................................................................................. 6
6 Simplified Forward Characteristics Model ...................................................................................... 8
7 Package outlines ................................................................................................................................ 9
8 Revision History ............................................................................................................................... 10
剩余10页未读,继续阅读
资源评论
芯脉芯城
- 粉丝: 3
- 资源: 4031
上传资源 快速赚钱
- 我的内容管理 展开
- 我的资源 快来上传第一个资源
- 我的收益 登录查看自己的收益
- 我的积分 登录查看自己的积分
- 我的C币 登录后查看C币余额
- 我的收藏
- 我的下载
- 下载帮助
安全验证
文档复制为VIP权益,开通VIP直接复制
信息提交成功