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02/12/09

www.irf.com 1

HEXFET

Power MOSFET

Benefits

l Optimized for Logic Level Drive

l Very Low R

DS(ON)

at 4.5V V

l Superior R*Q at 4.5V V

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

Applications

l DC Motor Drive

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

PD - 97370

IRLS4030PbF

IRLSL4030PbF

GDS

Gate Drain Source

DSS

100V

(

)

typ.

3.4m

Ω

max.

4.3m

Ω

180A

Pak

IRLS4030PbF

TO-262

IRLSL4030bF

Absolute Maximum Ratings

Symbol Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery

V/ns

Operating Junction and

°C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

AS (Thermally limited)

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Thermal Resistance

Symbol Parameter Typ. Max. Units

Junction-to-Case

–––

0.40

°C/W

Junction-to-Ambient (PCB Mount)

––– 40

300

Max.

180

130

730

305

See Fig. 14, 15, 22a, 22b

370

-55 to + 175

± 16

2.5

IRLS/SL4030PbF

2 www.irf.com

Notes:

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

Jmax

, starting T

= 25°C, L = 0.05mH

= 25Ω, I

= 110A, V

=10V. Part not recommended for use

above this value .

 I

≤ 110A, di/dt ≤ 1330A/µs, V

≤ V

(BR)DSS

, T

≤ 175°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 C

oss

eff. (TR) is a fixed capacitance that gives the same charging time

as C

oss

while V

is rising from 0 to 80% V

DSS

 C

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

is rising from 0 to 80% V

DSS

 When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniquea refer to applocation

note # AN- 994 echniques refer to application note #AN-994.

 R

is measured at T

approximately 90°C.

 R

θJC

value shown is at time zero.

Static @ T

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V

∆V

(BR)DSS

∆T

Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C

DS(on)

Static Drain-to-Source On-Resistance ––– 3.4 4.3

mΩ

––– 3.6 4.5

GS(th)

Gate Threshold Voltage 1.0 ––– 2.5 V

DSS

Drain-to-Source Leakage Current ––– ––– 20

––– ––– 250

GSS

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

G(int)

Internal Gate Resistance

–––

2.1 ––– Ω

Dynamic @ T

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 320 ––– ––– S

Total Gate Charge ––– 87 130

Gate-to-Source Charge ––– 27 –––

Gate-to-Drain ("Miller") Charge ––– 45 –––

sync

Total Gate Charge Sync. (Q

- Q

)

––– 42 –––

d(on)

Turn-On Delay Time ––– 74 –––

Rise Time ––– 330 –––

d(off)

Turn-Off Delay Time ––– 110 –––

Fall Time ––– 170 –––

iss

Input Capacitance ––– 11360 –––

oss

Output Capacitance ––– 670 –––

rss

Reverse Transfer Capacitance ––– 290 –––

oss

eff. (ER)

Effective Output Capacitance (Energy Related)

––– 760 –––

oss

eff. (TR)

Effective Output Capacitance (Time Related)

––– 1140 –––

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

c

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 50 –––

= 25°C V

= 85V,

––– 60 –––

= 125°C I

= 110A

Reverse Recovery Charge ––– 88 –––

= 25°C

dt = 100A

µs

––– 130 –––

= 125°C

RRM

Reverse Recovery Current ––– 3.3 ––– A

= 25°C

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

= 4.5V, I

= 92A

180

730

µA

––– –––

= 110A

= 2.7Ω

= 4.5V

= 65V

= 110A, V

=0V, V

= 4.5V

= 25°C, I

= 110A, V

= 0V

integral reverse

p-n junction diode.

Conditions

= 0V, I

= 250µA

Reference to 25°C, I

= 5mA

= 10V, I

= 110A

= V

, I

= 250µA

= 100V, V

= 0V

= 100V, V

= 0V, T

= 125°C

MOSFET symbol

showing the

= 50V

Conditions

= 4.5V

= 0V

= 50V

ƒ = 1.0MHz

= 0V, V

= 0V to 80V

= 0V, V

= 0V to 80V

Conditions

= 25V, I

= 110A

= 16V

= -16V

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