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ISC022N10NM6 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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ISC022N10NM6 INFINEON 英飞凌芯片 中文版规格书手册
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1
ISC022N10NM6
Rev.2.0,2021-07-05Final Data Sheet
Pin 1
2
3
4
5
6
7
8
4
3
2
1
5
6
7
8
PG-TSON-8-3
Drain
Pin 5-8
Gate
Pin 4
Source
Pin 1-3
*1
*1: Internal body diode
MOSFET
OptiMOS
TM
6Power-Transistor,100V
Features
•N-channel,normallevel
•Verylowon-resistanceR
DS(on)
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowreverserecoverycharge(Q
rr
)
•Highavalancheenergyrating
•175°Coperatingtemperature
•Optimizedforhighfrequencyswitchingandsynchronousrectification
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•MSL1classifiedaccordingtoJ-STD-020
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
100 V
R
DS(on),max
2.24 mΩ
I
D
230 A
Q
oss
135 nC
Q
G
(0V...10V) 73 nC
Q
rr
(100A/µs) 70 nC
Type/OrderingCode Package Marking RelatedLinks
ISC022N10NM6 PG-TSON-8-3 022N1N6 -
2
OptiMOS
TM
6Power-Transistor,100V
ISC022N10NM6
Rev.2.0,2021-07-05Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
OptiMOS
TM
6Power-Transistor,100V
ISC022N10NM6
Rev.2.0,2021-07-05Final Data Sheet
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
-
-
-
-
230
163
147
25
A
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=8V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=50°C/W
2)
Pulsed drain current
3)
I
D,pulse
- - 920 A T
A
=25°C
Avalanche current, single pulse
4)
I
AS
- - 50 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 1535 mJ I
D
=21A,R
GS
=25Ω
Gate source voltage V
GS
-20 - 20 V -
Power dissipation P
tot
-
-
-
-
254
3.0
W
T
C
=25°C
T
A
=25°C,R
thJA
=50°C/W
2)
Operating and storage temperature T
j
,T
stg
-55 - 175 °C -
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
bottom
R
thJC
- 0.29 0.59 °C/W -
Thermal resistance, junction - case,
top
R
thJC
- - 20 °C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area
R
thJA
- - 50 °C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
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