BSB104N08NP3 G
OptiMOS™3 Power-MOSFET
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x R
DS(on)
product (FOM)
• Low profile (<0.7mm)
• Dual sided cooling
• Low parasitic inductance
• N-channel, normal level
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
50 A
V
GS
=10 V, T
C
=100 °C
32
V
GS
=10 V, T
A
=25 °C,
R
thJA
=45 K/W
1)
13
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
200
Avalanche energy, single pulse
3)
E
AS
I
D
=30 A, R
GS
=25 W
110 mJ
Gate source voltage
V
GS
±20 V
Value
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
V
DS
80
V
R
DS(on),max
10.4
mW
I
D
50
A
Product Summary
Type
Package
Outline
Marking
BSB104N08NP3 G
MG-WDSON-2
MP
0308
CanPAK
TM
M
MG-WDSON-2
Rev. 2.1 page 1 2013-11-28
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