IAUC64N08S5L075
OptiMOS
™
-5 Power Transistor
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• MSL1 up to 260°C peak reflow
• 175 °C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Drain current
I
D
V
GS
=10 V, Chip
limitation
1,2)
64 A
V
GS
=10V, DC current
64
T
a
=85 °C, V
GS
=10 V,
R
thJA
on 2s2p
2,3)
13
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
256
Avalanche energy, single pulse
2)
E
AS
I
D
=36 A
56 mJ
Avalanche current, single pulse
I
AS
-
36 A
Gate source voltage
V
GS
-
±20 V
Power dissipation
P
tot
T
C
=25 °C
75 W
Operating and storage temperature
T
j
, T
stg
-
-55 ... +175 °C
Value
V
DS
80 V
R
DS(on),max
7.5
mW
I
D
64 A
Product Summary
Type Package Marking
IAUC64N08S5L075 PG-TDSON-8-33 5N08L075
1
1
PG-TDSON-8-33
Rev. 1.1
page 1 2021-06-18
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