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AIKB50N65DF5 INFINEON 英飞凌 电子元器件芯片.pdf
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AIKB50N65DF5 INFINEON 英飞凌 电子元器件芯片
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Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1
www.infineon.com 2019-10-17
AIKB50N65DF5
Highspeedswitchingseriesfifthgeneration
HighspeedfastIGBTinTRENCHSTOP
TM
5technologycopackedwith
RAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedF5technologyoffering:
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowgatechargeQ
G
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•Dynamicallystresstested
•QualifiedaccordingtoAEC-Q101
•Greenpackage(RoHScompliant)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Off-boardcharger
•On-boardcharger
•DC/DCconverter
•Power-Factorcorrection
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
G
C
E
G
E
C
KeyPerformanceandPackageParameters
Type V
CE
I
C
V
CEsat
,T
vj
=25°C T
vjmax
Marking Package
AIKB50N65DF5 650V 50A 1.6V 175°C AK50EDF5 PG-TO263-3
![](https://csdnimg.cn/release/download_crawler_static/87819411/bg2.jpg)
Datasheet 2 V2.1
2019-10-17
AIKB50N65DF5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet 3 V2.1
2019-10-17
AIKB50N65DF5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Parameter Symbol Value Unit
Collector-emittervoltage,T
vj
≥25°C V
CE
650 V
DCcollectorcurrent,limitedbyT
vjmax
T
c
=25°Cvaluelimitedbybondwire
T
c
=100°C
I
C
80.0
56.0
A
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
1)
I
Cpuls
150.0 A
Turn off safe operating area
V
CE
≤650V,T
vj
≤175°C,t
p
=1µs
1)
- 150.0 A
Diodeforwardcurrent,limitedbyT
vjmax
T
c
=25°Cvaluelimitedbybondwire
T
c
=100°C
I
F
42.0
26.0
A
Diodepulsedcurrent,t
p
limitedbyT
vjmax
1)
I
Fpuls
150.0 A
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
V
GE
±20
±30
V
PowerdissipationT
c
=25°C
PowerdissipationT
c
=100°C
P
tot
305.0
152.5
W
Operating junction temperature T
vj
-40...+175 °C
Storage temperature T
stg
-55...+150 °C
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020) 260
°C
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
R
th
Characteristics
IGBT thermal resistance,
junction - case
R
th(j-c)
- - 0.50 K/W
Diode thermal resistance,
junction - case
R
th(j-c)
- - 1.60 K/W
Thermal resistance, min. footprint
junction - ambient
R
th(j-a)
- - 65 K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
R
th(j-a)
- - 40 K/W
1)
Defined by design. Not subject to production test.
![](https://csdnimg.cn/release/download_crawler_static/87819411/bg4.jpg)
Datasheet 4 V2.1
2019-10-17
AIKB50N65DF5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V
(BR)CES
V
GE
=0V,I
C
=0.20mA 650 - - V
Collector-emitter saturation voltage V
CEsat
V
GE
=15.0V,I
C
=50.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
1.60
1.80
1.90
2.10
-
-
V
Diode forward voltage V
F
V
GE
=0V,I
F
=27.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
1.45
1.40
1.40
1.80
-
-
V
Gate-emitter threshold voltage V
GE(th)
I
C
=0.50mA,V
CE
=V
GE
3.2 4.0 4.8 V
Zero gate voltage collector current I
CES
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
-
-
-
1000
40
-
µA
Gate-emitter leakage current I
GES
V
CE
=0V,V
GE
=20V - - 100 nA
Transconductance g
fs
V
CE
=20V,I
C
=50.0A - 50.0 - S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance C
ies
- 3000 -
Output capacitance C
oes
- 65 -
Reverse transfer capacitance C
res
- 11 -
V
CE
=25V,V
GE
=0V,f=1MHz pF
Gate charge Q
G
V
CC
=520V,I
C
=50.0A,
V
GE
=15V
- 115.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
L
E
- 7.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time t
d(on)
- 23 - ns
Rise time t
r
- 16 - ns
Turn-off delay time t
d(off)
- 166 - ns
Fall time t
f
- 13 - ns
Turn-on energy E
on
- 0.55 - mJ
Turn-off energy E
off
- 0.11 - mJ
Total switching energy E
ts
- 0.66 - mJ
T
vj
=25°C,
V
CC
=400V,I
C
=25.0A,
V
GE
=0.0/15.0V,
R
G(on)
=12.0Ω,R
G(off)
=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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