AIKB50N65DF5 INFINEON 英飞凌 电子元器件芯片.pdf

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1

www.infineon.com 2019-10-17

AIKB50N65DF5

Highspeedswitchingseriesfifthgeneration

HighspeedfastIGBTinTRENCHSTOP

TM

5technologycopackedwith

RAPID1fastandsoftantiparalleldiode



FeaturesandBenefits:

•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

•Maximumjunctiontemperature175°C

•Dynamicallystresstested

•QualifiedaccordingtoAEC-Q101

•Greenpackage(RoHScompliant)

•CompleteproductspectrumandPSpiceModels:

http://www.infineon.com/igbt/

Applications:

•Off-boardcharger

•On-boardcharger

KeyPerformanceandPackageParameters

Type V

,T

=25°C T

Marking Package

Datasheet 2 V2.1

2019-10-17

AIKB50N65DF5

Highspeedswitchingseriesfifthgeneration

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V2.1

2019-10-17

AIKB50N65DF5

T

=25°Cvaluelimitedbybondwire

T

=100°C

I

C

80.0

56.0

A

Pulsedcollectorcurrent,t

limitedbyT

vjmax

1)

I

Cpuls

150.0 A

Turn off safe operating area

V

≤650V,T

=1µs

T

=100°C

F

26.0

Diodepulsedcurrent,t

vjmax

1)

I

Fpuls

150.0 A

Gate-emitter voltage

TransientGate-emittervoltage(t

p

≤10µs,D<0.010)

V

V

Operating junction temperature T

-40...+175 °C

Storage temperature T

-55...+150 °C

Soldering temperature,

reflow soldering (MSL1 according to JEDEC J-STA-020) 260

°C

ThermalResistance

Value

Diode thermal resistance,

junction - case

Thermal resistance, min. footprint

junction - ambient

Datasheet 4 V2.1

2019-10-17

AIKB50N65DF5

Highspeedswitchingseriesfifthgeneration

ElectricalCharacteristic,atT

=25°C,unlessotherwisespecified

Value

Parameter Symbol Conditions Unit

StaticCharacteristic

Collector-emitter breakdown voltage V

(BR)CES

V

GE

=0V,I

C

=0.20mA 650 - - V

Collector-emitter saturation voltage V

CEsat

T

vj

=175°C

1.90

Diode forward voltage V

F

V

GE

=0V,I

F

T

vj

=25°C

T

vj

=125°C

1.45

1.40

1.80