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FLASH MEMORY
1
K9F1G08D0M
K9F1G16Q0M
K9F1G08U0M K9F1G16U0M
K9F1G08Q0M
K9F1G16D0M
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Remark
Advance
History
1. Initial issue
1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. A recovery time of minimum 1µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
1. ALE status fault in ’Random data out in a page’ timing diagram(page 19)
is fixed.
1. tAR1, tAR2 are merged to tAR.(Page11)
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
6. tCHZ is devided into tCHZ and tOH.(Page11)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
Draft Date
July. 5. 2001
Nov. 5. 2001
Dec. 4. 2001
Apr. 25. 2002
Nov. 22.2002
Mar. 6.2003
Mar. 13.2003
FLASH MEMORY
2
K9F1G08D0M
K9F1G16Q0M
K9F1G08U0M K9F1G16U0M
K9F1G08Q0M
K9F1G16D0M
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.7
0.8
0.9
1.0
RemarkHistory
Errata is added.(Front Page)-K9F1GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Specification 45 25 15 50 15 25 30 45
Relaxed value 80 60 20 80 20 60 60 75
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
1. 2.65V device is added.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
AC parameters are changed-K9F1GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Before 45 25 15 50 15 25 30 45
After 80 60 20 80 20 60 60 75
Draft Date
Mar.17. 2003
Apr. 9. 2003
Jul. 2. 2003
Aug. 5. 2003
FLASH MEMORY
3
K9F1G08D0M
K9F1G16Q0M
K9F1G08U0M K9F1G16U0M
K9F1G08Q0M
K9F1G16D0M
GENERAL DESCRIPTION
FEATURES
• Voltage Supply
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
- 2.65V device(K9F1GXXD0M) : 2.4~2.9V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
• Organization
- Memory Cell Array
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
- Data Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
• Automatic Program and Erase
- Page Program
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
- Block Erase
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
• Page Read Operation
- Page Size
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
- Random Read : 25µs(Max.)
- Serial Access : 50ns(Min.)*
*K9F1GXXQ0M : 80ns
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Fast Write Cycle Time
- Program time : 300µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Cache Program Operation for High Performance Program
• Power-On Auto-Read Operation
• Intelligent Copy-Back Operation
• Unique ID for Copyright Protection
• Package :
- K9F1GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0M-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1GXXX0M-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0M-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or
word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin-
ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M′s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for
large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
PRODUCT LIST
Part Number Vcc Range Organization PKG Type
K9F1G08Q0M-Y,P
1.70 ~ 1.95V
X8
TSOP1
K9F1G16Q0M-Y,P X16
K9F1G08D0M-Y,P
2.4 ~ 2.9V
X8
TSOP1
K9F1G16D0M-Y,P X16
K9F1G08U0M-Y,P
2.7 ~ 3.6V
X8
TSOP1
K9F1G16U0M-Y,P X16
K9F1G08U0M-V,F X8 WSOP1
FLASH MEMORY
4
K9F1G08D0M
K9F1G16Q0M
K9F1G08U0M K9F1G16U0M
K9F1G08Q0M
K9F1G16D0M
PIN CONFIGURATION (TSOP1)
K9F1GXXX0M-YCB0,PCB0/YIB0,PIB0
X8X16 X16X8
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
0.787± 0.008
20.00± 0.20
#1
#24
0.20
+0 .07
-0 .03
0.008
+0 .003
-0.0 01
0.50
0.0197
#48
#25
0.488
12.40
MAX
12.00
0.472
0.10
0.004
MAX
0.25
0.010
( )
0.039±0.002
1.00± 0.05
0.002
0.05
MIN
0.047
1.20
MAX
0.45~0.75
0.018~0.030
0.724± 0.004
18.40± 0.10
0~8°
0.010
0.25
TYP
0.125
+0 .075
0 .035
0.005
+0 .003
-0 .001
0.50
0.020
( )
48-pin TSOP1
Standard Type
12mm x 20mm
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48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
PRE
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
PRE
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
FLASH MEMORY
5
K9F1G08D0M
K9F1G16Q0M
K9F1G08U0M K9F1G16U0M
K9F1G08Q0M
K9F1G16D0M
PIN CONFIGURATION (WSOP1)
K9F1G08U0M-VCB0,FCB0/VIB0,FIB0
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40± 0.10
#1
#24
0.20
+0 .07
- 0.0 3
0.16
+0.0 7
-0 .03
0.50TYP
(0.50± 0.06)
#48
#25
12.00±0 .10
0.10
+0.0 75
-0 .035
0.58± 0.04
0.70 MAX
(0.1Min)
17.00±0.20
0
°
~
8
°
0.45~0.75
1
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45
44
43
42
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33
32
31
30
29
28
27
26
25
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
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