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TI-LMK61E08.pdf
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SCL OUTN
VDDSDA
GND OUTP
1 6
2 5
43
LMK61E0X
Ultra-high performance oscillator
PLL
Output
Divider
Output
Buffer
Power
Conditioning
Interface
I
2
C/EEPROM
Integrated
Oscillator
Copyright © 2016, Texas Instruments Incorporated
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMK61E08
SNAS805 –JUNE 2020
LMK61E08 Ultra-Low Jitter Programmable Oscillator With Internal EEPROM
1
1 Features
1
• Ultra-Low Noise, High Performance
– Jitter: 90-fs RMS Typical f
OUT
> 100 MHz on
LMK61E08
– PSRR: –70 dBc, Robust Supply Noise
Immunity on LMK61E08
• Flexible Output Format on LMK61E08
– LVPECL up to 1 GHz
– LVDS up to 900 MHz
– HCSL up to 400 MHz
• Total Frequency Tolerance of ±25 ppm
• System Level Features
– Glitch-Less Frequency Margining: Up to ±1000
ppm From Nominal
– Internal EEPROM: User Configurable Start-Up
Settings
• Other Features
– Device Control: Fast Mode I
2
C up to 1000 kHz
– 3.3-V Operating Voltage
– Industrial Temperature Range (–40ºC to
+85ºC)
– 7-mm × 5-mm 6-Pin Package
• Default Frequency:
– 70.656 MHz
2 Applications
• High-Performance Replacement for Crystal, SAW,
or Silicon-Based Oscillators
• Switches, Routers, Network Line Cards, Base
Band Units (BBU), Servers, Storage/SAN
• Test and Measurement
• Medical Imaging
• FPGA, Processor Attach
• xDSL, Broadcast Video
3 Description
The LMK61E08 family of ultra-low jitter PLLatinum™
programmable oscillators uses fractional-N frequency
synthesizers with integrated VCOs to generate
commonly used reference clocks. The output on
LMK61E08 can be configured as LVPECL, LVDS, or
HCSL. The device features self-start-up from on-chip
EEPROM to generate a factory-programmed default
output frequency, or the device registers and
EEPROM settings are fully programmable in-system
through an I
2
C serial interface. The device provides
fine and coarse frequency margining control through
an I
2
C serial interface, making it a digitally-controlled
oscillator (DCXO).
The PLL feedback divider can be updated to adjust
the output frequency without spikes or glitches in
steps of <1ppb using a PFD of 12.5 MHz (R
divider=4, doubler disabled) for compatibility with
xDSL requirements, or in steps of <5.2 ppb using a
PFD of 100 MHz (R divider=1, doubler enabled) for
compatibility with broadcast video requirements. The
frequency margining features also facilitate system
design verification tests (DVT), such as standards
compliance and system timing margin testing.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LMK61E08 QFM (6) 7.00 mm × 5.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Pinout and Simplified Block Diagram
2
LMK61E08
SNAS805 –JUNE 2020
www.ti.com
Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated
Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings ............................................................ 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics - Power Supply ................. 5
6.6 LVPECL Output Characteristics................................ 5
6.7 LVDS Output Characteristics .................................... 5
6.8 HCSL Output Characteristics.................................... 5
6.9 Frequency Tolerance Characteristics ....................... 6
6.10 Frequency Margining Characteristics ..................... 6
6.11 Power-On Reset Characteristics (VDD).................. 6
6.12 I
2
C-Compatible Interface Characteristics (SDA,
SCL)........................................................................... 6
6.13 PSRR Characteristics ............................................. 7
6.14 Other Characteristics .............................................. 7
6.15 PLL Clock Output Jitter Characteristics .................. 7
6.16 Typical 156.25-MHz Output Phase Noise
Characteristics ........................................................... 8
6.17 Typical 161.1328125 MHz Output Phase Noise
Characteristics ........................................................... 8
6.18 Additional Reliability and Qualification.................... 8
6.19 Typical Characteristics............................................ 9
7 Parameter Measurement Information ................ 13
7.1 Device Output Configurations ................................. 13
8 Detailed Description............................................ 15
8.1 Overview ................................................................. 15
8.2 Functional Block Diagram ....................................... 15
8.3 Feature Description................................................. 16
8.4 Device Functional Modes........................................ 19
8.5 Programming........................................................... 22
8.6 Register Maps......................................................... 26
9 Application and Implementation ........................ 39
9.1 Application Information............................................ 39
9.2 Typical Application .................................................. 39
10 Power Supply Recommendations ..................... 43
11 Layout................................................................... 43
11.1 Layout Guidelines ................................................. 43
11.2 Layout Example .................................................... 44
12 Device and Documentation Support ................. 45
12.1 Documentation Support ....................................... 45
12.2 Receiving Notification of Documentation Updates 45
12.3 Support Resources ............................................... 45
12.4 Trademarks........................................................... 45
12.5 Electrostatic Discharge Caution............................ 45
12.6 Glossary................................................................ 45
13 Mechanical, Packaging, and Orderable
Information ........................................................... 45
13.1 Package Option Addendum.................................. 46
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
DATE VERSION NOTES
June 2020 * Initial release.
SCL OUTN
VDDSDA
GND OUTP
1 6
2 5
43
3
LMK61E08
www.ti.com
SNAS805 –JUNE 2020
Submit Documentation FeedbackCopyright © 2020, Texas Instruments Incorporated
5 Pin Configuration and Functions
SIA Package
6-Pin QFM
Top View
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
POWER
GND 3 Ground Device Ground.
VDD 6 Power 3.3-V Power Supply.
OUTPUT BLOCK
OUTP 4
Output Differential Output Pair (LVPECL, LVDS, or HCSL).
OUTN 5
DIGITAL CONTROL / INTERFACES
SCL 2 LVCMOS I
2
C Serial Clock (open-drain). Requires an external pullup resistor to VDD.
SDA 1 LVCMOS I
2
C Serial Data (bidirectional, open-drain). Requires an external pullup resistor to VDD.
4
LMK61E08
SNAS805 –JUNE 2020
www.ti.com
Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
VDD Device supply voltage –0.3 3.6 V
V
IN
Input voltage for logic inputs –0.3 VDD + 0.3 V
V
OUT
Output voltage for clock outputs –0.3 VDD + 0.3 V
T
J
Junction temperature 150 °C
T
STG
Storage temperature –40 125 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101
(2)
±500
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD Device supply voltage 3.135 3.3 3.465 V
T
A
Ambient temperature –40 25 85 °C
T
J
Junction temperature 115 °C
t
RAMP
VDD power-up ramp time 0.1 100 ms
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) The package thermal resistance is calculated on a 4-layer JEDEC board.
(3) Connected to GND with 3 thermal vias (0.3-mm diameter).
(4) ψ
JB
(junction-to-board) is used when the main heat flow is from the junction to the GND pad. See Layout Guidelines for more information
on ensuring good system reliability and quality.
6.4 Thermal Information
THERMAL METRIC
(1)
LMK61E08
(2) (3) (4)
UNIT
SIA (QFM)
8 PINS
Airflow (LFM) 0 Airflow (LFM) 200 Airflow (LFM) 400
R
θJA
Junction-to-ambient thermal resistance 54 44 41.2 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 34 n/a n/a °C/W
R
θJB
Junction-to-board thermal resistance 36.7 n/a n/a °C/W
ψ
JT
Junction-to-top characterization parameter 11.2 16.9 21.9 °C/W
ψ
JB
Junction-to-board characterization parameter 36.7 37.8 38.9 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance n/a n/a n/a °C/W
5
LMK61E08
www.ti.com
SNAS805 –JUNE 2020
Submit Documentation FeedbackCopyright © 2020, Texas Instruments Incorporated
(1) Refer to Parameter Measurement Information for relevant test conditions.
(2) On-chip power dissipation should exclude 40 mW, dissipated in the 150-Ω termination resistors, from total power dissipation.
6.5 Electrical Characteristics - Power Supply
(1)
VDD = 3.3 V ± 5%, T
A
= –40°C to 85°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDD Device current consumption LVPECL
(2)
162 208
mA
HCSL 155 196
IDD-PD Device current consumption
when output is disabled
120
(1) Refer to Parameter Measurement Information for relevant test conditions.
(2) An output frequency over f
OUT
maximum spec is possible, but output swing may be less than V
OD
minimum spec.
(3) Ensured by characterization.
6.6 LVPECL Output Characteristics
(1)
VDD = 3.3 V ± 5%, T
A
= –40C to 85°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
OUT
Output frequency
(2)
10 1000 MHz
V
OD
Output voltage swing
(V
OH
- V
OL
)
(2)
700 800 1200 mV
V
OUT, DIFF, PP
Differential output peak-to-
peak swing
2 x
|V
OD
|
V
V
OS
Output common-mode voltage VDD –
1.55
V
t
R
/ t
F
Output rise/fall time (20% to
80%)
(3)
120 200 ps
PN-Floor Output phase noise floor
(f
OFFSET
> 10 MHz)
156.25 MHz
–165
dBc/Hz
ODC Output duty cycle
(3)
45% 55%
(1) An output frequency over f
OUT
max spec is possible, but output swing may be less than V
OD
min spec.
(2) Ensured by characterization.
6.7 LVDS Output Characteristics
(1)
VDD = 3.3 V ± 5%, T
A
= –40°C to 85°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
OUT
Output Frequency
(1)
10 900 MHz
V
OD
Output Voltage Swing
(V
OH
- V
OL
)
(1)
300 390 480 mV
V
OUT, DIFF, PP
Differential Output Peak-to-
Peak Swing
2 x
|V
OD
|
V
V
OS
Output Common Mode
Voltage
1.2 V
t
R
/ t
F
Output Rise/Fall Time (20% to
80%)
(2)
150 250 ps
PN-Floor Output Phase Noise Floor
(f
OFFSET
> 10 MHz)
156.25 MHz
–162 dBc/Hz
ODC Output Duty Cycle
(2)
45% 55%
R
OUT
Differential Output Impedance 125 Ω
(1) Refer to Parameter Measurement Information for relevant test conditions.
6.8 HCSL Output Characteristics
(1)
VDD = 3.3 V ± 5%, T
A
= –40°C to 85°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
OUT
Output frequency 10 400 MHz
V
OH
Output high voltage 600 850 mV
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