TI-THS4521-HT.pdf_THS4521资源-CSDN文库

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0 2k 4k 6k 8k 10k 12k 14k 16k 18k 20k

Frequency (Hz)

Magnitude (dBV)

THS4521 ADS1278 (CH 1)

49.9 W

1 kW

49.9 W

IN+

IN-

3.3 V

1 kW

2.2 nF

AINP1

AINN1

1.5 nF

1 kW

THS4521-HT

www.ti.com.cn

ZHCS261D –APRIL 2011–REVISED MAY 2012

极极低低功功率率，，负负电电源源轨轨输输入入，，

轨轨到到轨轨输输出出，，完完全全差差分分放放大大器器

查查询询样样品品: THS4521-HT

特特性性

• 全全差差分分架架构构应应用用范范围围

• 带带宽宽：： 40.7 MHz (210°C)

• 潜潜孔孔钻钻进进

• 转转换换速速率率：： 353.5 V/μs (210°C)

• 高高温温环环境境

• HD

: –96 dBc，，在在 1 kHz

支支持持极极端端温温度度应应用用

(1 V

RMS

, R

= 1 kΩ) (210°C)

• HD

: –91.5 dBc，，在在 1 kHz

• 受受控控基基线线

(1 V

RMS

, R

= 1 kΩ) (210°C)

• 一一个个组组装装/测测试试场场所所

• 输输入入电电压压噪噪声声：： 19.95 nV/√Hz (f = 100 kHz)

• 一一个个制制造造场场所所

• 开开环环增增益益：： 90 dB （（典典型型值值））(210°C)

• 可可在在极极端端温温度度范范围围 (–55°C/210°C)

• NRI—负负轨轨输输入入

下下工工作作

(1)

• RRO—轨轨至至轨轨输输出出

• 产产品品生生命命周周期期有有所所延延长长

• 输输出出共共模模控控制制（（具具有有低低失失调调及及低低漂漂移移））

• 拓拓展展的的产产品品变变更更通通知知

• 电电源源

• 产产品品可可追追溯溯性性

– 电电压压：： 2.5 V (±1.25 V) 至至 3.3 V (±1.65 V)

• 德德州州仪仪器器的的高高温温产产品品运运用用了了高高度度优优化化的的硅硅片片（（芯芯

片片））解解决决方方案案，，此此类类解解决决方方案案在在设设计计与与工工艺艺方方面面均均

– 电电流流：：每每通通道道 1.4 mA （（在在 3.3 V 电电压压下下））

有有所所强强化化，，以以在在扩扩展展的的温温度度范范围围内内实实现现性性能能的的最最大大

• 断断电电能能力力：： 10 µA （（典典型型值值））(210°C)

化化。。

(1) 可定制工作温度范围

说说明明

THS4521 是一款极低功率，完全差分运算放大器，此放大器具有轨到轨输出和一个包括负电源轨在内的输入共模

范围。这个放大器设计用于低功率数据采集系统和高密度应用，在此类应用中功率耗散是一个关键参数，此放大器

还在音频应用中提供出色的性能。

THS4521 具有准确的输出共模控制能力，可在驱动模数转换器 (ADC) 时实现 DC 耦合。这种控制能力与一个低于

负电源轨的输入共模范围以及轨至轨输出相结合，可在单端接地参考信号源之间实现简易型连接。此外，该器件还

非常适合只采用单 2.5-V 至 3.3-V 电源和地面电源来驱动逐次逼近寄存器型 (SAR) 和增量-累加型 (ΔΣ) ADC。

THS4521 针对 –55°C 至 210°C 的工作温度范围进行了特性分析。

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not English Data Sheet: SBOS548

necessarily include testing of all parameters.

THS4521-HT

www.ti.com.cn

ZHCS261D –APRIL 2011–REVISED MAY 2012

ORDERING INFORMATION

(1)

PACKAGE

(2)

ORDERABLE PART NUMBER TOP-SIDE MARKING

–55°C to175°C D THS4521HD THS4521

KGD (bare die) THS4521SKGD1 NA

–55°C to 210°C HKJ THS4521SHKJ THS4521SHKJ

HKQ THS4521SHKQ THS4521SHKQ

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range (unless otherwise noted).

UNIT

Supply Voltage, V

S–

to V

S+

3.6 V

Input/Output Voltage, V

IN±

, V

OUT±

, V

OCM

pins) (V

S–

) – 0.7 to (V

S+

) + 0.7V V

Differential Input Voltage, V

1 V

Output Current, I

100 mA

Input Current, I

IN±

, V

OCM

pins) 10 mA

Continuous Power Dissipation See Thermal Characteristic Specifications

Maximum Junction Temperature, T

(continuous operation, long-term reliability)

(2)

217 °C

D package –40 to 175

Operating Free-air Temperature Range, T

°C

KGD, HKJ, HKQ packages –55 to 210

Storage Temperature Range, T

STG

–65 to 210 °C

Human Body Model (HBM) 1300 V

ESD

Charge Device Model (CDM) 1000 V

Rating:

Machine Model (MM) 50 V

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability.

(2) Refer to Figure 1 for expected life time.

THERMAL CHARACTERISTICS FOR D PACKAGE

over operating free-air temperature range (unless otherwise noted)

PARAMETER MIN TYP MAX UNIT

(1)

Junction-to-case thermal resistance 72.5 °C/W

Junction-to-ambient thermal resistance 118.5 °C/W

(1) Taken as per JESD51.

THERMAL CHARACTERISTICS FOR HKJ OR HKQ PACKAGE

over operating free-air temperature range (unless otherwise noted)

PARAMETER MIN TYP MAX UNIT

to ceramic side of case 5.7

Junction-to-case thermal resistance °C/W

to top of case lid (metal side of case) 13.7

THS4521-HT

ZHCS261D –APRIL 2011–REVISED MAY 2012

www.ti.com.cn

ELECTRICAL CHARACTERISTICS: V

S+

– V

S–

= 3.3 V

At V

S+

= 3.3 V, V

S–

= 0 V, V

OCM

= open, V

OUT

= 2 V

(differential), R

= 1 kΩ differential, G = 1 V/V, single-ended input,

differential output, input and output referenced to midsupply, unless otherwise noted.

-55°C to 125°C 175°C -55°C to 210°C

TEST

PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT LEVEL

(1)

AC PERFORMANCE

OUT

= 100 mV

Small-Signal Bandwidth 104.3 40.7 40.7 MHz C

G = 1

OUT

= 100 mV

42 12.5 12.5 MHz C

G = 2

OUT

= 100 mV

12.2 3.15 3.15 MHz C

G = 5

OUT

= 100 mV

8.1 2.2 2.2 MHz C

G = 10

Gain Bandwidth V

OUT

= 100 mV

81 22 22 MHz C

Product G = 10

Large-Signal Bandwidth V

OUT

= 2 V

, G = 1 84 22 22 MHz C

Bandwidth for 0.1-dB

OUT

= 2 V

, G = 1 18.1 5.4 5.4 MHz C

Flatness

Rising Slew Rate V

OUT

= 2-V Step,

377.5 353.5 353.5 V/μs C

(Differential) G = 1, R

= 200 Ω

Falling Slew Rate V

OUT

= 2-V Step,

422.5 392.5 392.5 V/μs C

(Differential) G = 1, R

= 200 Ω

OUT

= 2-V Step,

Overshoot 6.75 8.85 8.85 % C

G = 1, R

= 200 Ω

OUT

= 2-V Step,

Undershoot 7.85 11.45 11.45 % C

G = 1, R

= 200 Ω

OUT

= 2-V Step,

Rise Time 13.5 15.9 15.9 ns C

G = 1, R

= 200 Ω

OUT

= 2-V Step,

Fall Time 11.4 14.6 14.6 ns C

G = 1, R

= 200 Ω

OUT

= 2-V Step,

Settling Time to 1% 18.5 23.5 23.5 ns C

G = 1, R

= 200 Ω

HARMONIC DISTORTION

f = 1 kHz,

OUT

= 1 V

RMS

–115 –96 –96 dBc C

G = 1

(2)

2nd harmonic

differential input

f = 1 MHz,

–77 –68.5 –68.5 dBc C

OUT

= 2 V

, G = 1

f = 1 kHz,

OUT

= 1 V

RMS

–116 –91.5 –91.5 dBc C

G = 1

(2)

3rd harmonic

differential input

f = 1 MHz,

–80.5 –68.5 –68.5 dBc C

OUT

= 2 V

, G = 1

Second-Order Two-tone, f

= 2 kHz,

Intermodulation f

= 500 Hz, –91.5 –79.5 –79.5 dBc C

Distortion V

OUT

= 1 V

RMS

envelope

Third-Order Two-tone, f

= 2 kHz,

Intermodulation f

= 500 Hz, –95.5 –79.5 –79.5 dBc C

Distortion V

OUT

= 1 V

RMS

envelope

Input Voltage Noise f > 10 kHz 9.05 19.95 19.95 nV/√Hz C

Input Current Noise f > 100 kHz 1.8 2.45 2.45 pA/√Hz C

Overdrive Recovery

Overdrive = ±0.5 V 116.5 126 126 ns C

Time

OUT

= 100 mV,

Output Balance Error –51.5 –45.5 –45.5 dB C

f ≤ 2 MHz (differential input)

Closed-Loop Output

f = 1 MHz (differential) 0.3 Ω C

Impedance

(1) Test levels: (A) 100% tested. (B) Limits set by characterization and simulation. (C) Typical value only for information.

(2) Not directly measureable; calculated using noise gain of 101.

THS4521-HT

www.ti.com.cn

ZHCS261D –APRIL 2011–REVISED MAY 2012

ELECTRICAL CHARACTERISTICS: V

S+

– V

S–

= 3.3 V (continued)

At V

S+

= 3.3 V, V

S–

= 0 V, V

OCM

= open, V

OUT

= 2 V

(differential), R

= 1 kΩ differential, G = 1 V/V, single-ended input,

differential output, input and output referenced to midsupply, unless otherwise noted.

-55°C to 125°C 175°C -55°C to 210°C

TEST

PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT LEVEL

(1)

DC PERFORMANCE

Open-Loop Voltage

102 81.9 90 dB A

Gain (A

)

Input-Referred Offset

±0.1 ±5 ±0.13 ±0.43 ±11.5 mV A

Voltage

Input offset voltage

±1 ±28 ±10 ±2 ±50 μV/°C B

drift

(3)

Input Bias Current ±0.75 ±3.3 ±0.75 ±4.5 ±0.78 ±4.5 μA A

Input bias current

±3.3 ±14 ±4.7 ±4.8 ±17 nA/°C B

drift

(3)

Input Offset Current ±0.3 ±1.7 ±0.5 ±3.2 ±0.5 ±3.5 µA A

Input offset current

±1.1 ±8 ±3.6 ±1.26 ±9 nA/°C B

drift

(3)

INPUT

Common-Mode Input

–0.1 0 -0.1 –0.1 0 V A

Voltage Low

Common-Mode Input

1.8 1.9 1.9 1.8 1.9 V A

Voltage High

Common-Mode

Rejection Ratio 80 105 95 74 98 dB A

(CMRR)

154∥3. 12.3∥4 12.3∥4

Input Resistance kΩ∥pF C

2 6 6

OUTPUT

Output Voltage Low 0.09 0.25 0.3 0.09 0.31 V A

Output Voltage High 2.95 3.11 3.11 2.85 3.05 V A

Output Current Drive

= 50 Ω ±35

(4)

±33

(4)

±33

(4)

mA C

(for linear operation)

POWER SUPPLY

Specified Operating V

2.5 3.6 2.5 3.6 2.5 3.6 A

Voltage

Quiescent Operating

0.85 1 1.3 0.9 1.16 1.4 0.9 1.1 1.4 mA A

Current, per channel

Power-Supply

Rejection Ratio 66 85 62.5 74 60 80 dB A

(±PSRR)

POWER DOWN

Enable Voltage Assured on

1 2.2 1 2.2 1 2.2 V A

Threshold above 2.2 V

Disable Voltage Assured off

0.7 1.6 0.7 1.6 0.7 1.6 V A

Threshold below 0.7 V

Disable Pin Bias

1 1 1 μA C

Current

Power Down Quiescent

2 10 10 μA C

Current

Time to V

OUT

= 90% of final

Turn-On Time Delay 86.5 99 99 ns C

value, V

= 2 V, R

= 200 Ω

Time to V

OUT

= 10% of

Turn-Off Time Delay original value, 136 145 144.5 ns C

= 2 V, R

= 200 Ω

OCM

VOLTAGE CONTROL

Small-Signal Bandwidth 21 13 13 MHz C

(3) Input Offset Voltage Drift, Input Bias Current Drift and Input Offset Current Drift are average values calculated by taking data at -55°C

and 125°C, computing the difference and dividing by 180. High temperature drift data is an average value calculated by taking data at -

55°C and 210°C, computing the difference and diving by 265.

(4) Continuous operation with high current loads at elevated temperature may affect product reliability. Refer to operating lifetime chart

(Figure 1).

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