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REN_r01an6436ej0100-rh850u2b_APN_20231031.pdf
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REN_r01an6436ej0100-rh850u2b_APN_20231031.pdf
Application Note
R01AN6436EJ0100 Rev.1.00 Page
1
of 15
2023.10.3
RH850/U2B Group
Data Flash Application Note
Summary
This application explains for the on-chipped RH850/U2Bx flash memory rewrite.
The contents of this application note are an example of a user program creation method related to the data flash rewrite.
The adaption for the software configuration, the data format among, etc. are required according to the adaptive system.
Application
This document applicates to RH850/U2Bx.
R01AN6436EJ0100
Rev.1.00
RH850/U2B Group Data Flash Application Note
R01AN6436EJ0100 Rev.1.00 Page
2
of 15
2023.10.3
Contents
1. Introduction ........................................................................................................................................ 3
1.1 Functions ........................................................................................................................................... 3
1.2 Applicable Condition.......................................................................................................................... 3
2. Basic Operation of Data Flash Memory Rewriting ............................................................................ 4
2.1 Flash Memory-Related Modules ....................................................................................................... 4
2.2 Initial Setting for Flash Memory ......................................................................................................... 5
2.3 Block Erasing of Data Flash .............................................................................................................. 6
2.4 4 Bytes Write to Data Flash .............................................................................................................. 9
2.5 Unit Block Wring of Data Flash ....................................................................................................... 11
2.6 Forced-end Command .................................................................................................................... 13
3. Detailed Specification ...................................................................................................................... 14
3.1 Address Map ................................................................................................................................... 14
RH850/U2B Group Data Flash Application Note
R01AN6436EJ0100 Rev.1.00 Page
3
of 15
2023.10.3
1. Introduction
This application note explains the program for the data flash rewrite.
1.1 Functions
Flash sequencer (Sequencer for flash memory)
Data flash memory
1.2 Applicable Condition
Self-programing condition enabling
In this application note, enable the following settings on “Cube Suite+” for rewriting the internal flash ROM.
(1) Select “***** (debugging tool)” from the Project Tree.
(2) Select the tab of “Setting for Connection”.
(3) Set “Flash” < “Perform flash self programing” < “Yes”.
RH850/U2B Group Data Flash Application Note
R01AN6436EJ0100 Rev.1.00 Page
4
of 15
2023.10.3
2. Basic Operation of Data Flash Memory Rewriting
This section explains about the data flash rewriting of RH850/U2Bx and the basic operation used in this application
note.
2.1 Flash Memory-Related Modules
Perform the flash memory erasing/rewriting to use the sequencer (flash sequencer) for the flash memory.
Figure 2-1 shows the configuration diagram of the flash memory-related sequencer. The flash sequencer is configured
by FCU and FACI. FCU executes the basic control of the flash memory rewriting. FACI controls FCU according to the
FACI command received via P-Bus. The product which mounts the data flash memory for ICUM FCU is mount
another pair of sequencers. These sequencers individually control the data flash memory for ICUM. When operating the
reset transmission, the FACI transmits the data to the IDCTRL/Option byte storing register from the flash memory.
Figure 2-1 Configuration Diagram of Flash Memory-related Module
In this application note,
・Block erasing of data flash by FACI command
・4 bytes data writing to data flash by FACI command
・Block (64 bytes) data writing by continuous execution of 4 bytes data writing
are as the basic operation of the data flash memory rewriting. For the other functions, refer to the related manuals,
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