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W25Q64(带书签版)(有笔记).pdf
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W25Q64是华邦公司推出的大容量SPI FLASH产品,其容量为64M Bit (8M Byte)。笔者使用该器件时花了时间,很多很少用到!为了帮助英语不好的较少阅读时间,把常用的做了注释,以便减少阅读!
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W25Q64BV
Publication Release Date: July 08, 2010
- 1 - Revision E
64M-BIT
SERIAL FLASH MEMORY WITH
DUAL AND QUAD SPI
W25Q64是一个具有SPI接口,大小为8M(Byte)的Flash。W25Q64内部分为128块,
每块位64k字节,每块又分为16个扇区,每个扇区又分为4k字节;
128*1024/8=64k
W25Q64管脚
①CS:片选管脚。低电平有效,上电之后,在执行一条新的指令之前,必须让CS管脚先有一个下降沿。
②/WP:写保护管脚。有效电平为低电平,高电平可读可写,低电平仅仅可读。
③/HOLD:保持管脚,低电平有效;当CS为低电平,并且/HOLD也为低电平时,数据输出管脚将保持高阻态,
并且会忽略数据输入管脚和时钟管脚上的信号,把/HOLD管脚拉高,器件恢复正常工作。
④CLK:串行时钟引脚。
⑤DI:串行数据输入引脚。数据,地址,和命令,从DI引脚输入到芯片内部,在CLK管脚的上升沿捕获数据。
⑥DO:串行数据输出引脚。下降沿输出数据;
3.W25Q64 工作模式
①工作模式0:CPOL=0;CPHA=0;
工作模式3:CPOL=1;CPHA=1;
②数据长度为8位,先发高位,再发地位
③SPI在标准模式下支持80M速度,快速模式下支持160M速度,高速模式支持320M速度
FALSH里面的数据只能由1变0,不能由0变1。要擦除才可以改变。
W25Q64BV
- 2 -
Table of Contents
1. GENERAL DESCRIPTION ............................................................................................................... 5
2. FEATURES.......................................................................................................................................5
3. PIN CONFIGURATION SOIC 208-MIL ............................................................................................ 6
4. PAD CONFIGURATION WSON 8X6-MM ........................................................................................ 6
5. PAD CONFIGURATION PDIP 300-MIL ........................................................................................... 7
6. PIN DESCRIPTION SOIC 208-MIL, PDIP 300-MIL AND WSON 8X6-MM...................................... 7
7. PIN CONFIGURATION SOIC 300-MIL ............................................................................................ 8
8. PIN DESCRIPTION SOIC 300-MIL .................................................................................................. 8
8.1 Package Types..................................................................................................................... 9
8.2 Chip Select (/CS).................................................................................................................. 9
8.3 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) .................................... 9
8.4 Write Protect (/WP)............................................................................................................... 9
8.5 HOLD (/HOLD) ..................................................................................................................... 9
8.6 Serial Clock (CLK)................................................................................................................9
9. BLOCK DIAGRAM..........................................................................................................................10
10. FUNCTIONAL DESCRIPTION ....................................................................................................... 11
10.1 SPI OPERATIONS ............................................................................................................. 11
10.1.1 Standard SPI Instructions...................................................................................................11
10.1.2 Dual SPI Instructions ..........................................................................................................11
10.1.3 Quad SPI Instructions.........................................................................................................11
10.1.4 Hold Function .....................................................................................................................11
10.2 WRITE PROTECTION ....................................................................................................... 12
10.2.1 Write Protect Features........................................................................................................12
11. CONTROL AND STATUS REGISTERS ........................................................................................ 13
11.1 STATUS REGISTER .......................................................................................................... 13
11.1.1 BUSY..................................................................................................................................13
11.1.2 Write Enable Latch (WEL) ..................................................................................................13
11.1.3 Block Protect Bits (BP2, BP1, BP0)....................................................................................13
11.1.4 Top/Bottom Block Protect (TB)...........................................................................................13
11.1.5 Sector/Block Protect (SEC) ................................................................................................13
11.1.6 Status Register Protect (SRP1, SRP0)...............................................................................14
11.1.7 Quad Enable (QE) ..............................................................................................................14
11.1.8 Status Register Memory Protection ....................................................................................16
11.2 INSTRUCTIONS................................................................................................................. 17
11.2.1 Manufacturer and Device Identification ..............................................................................17
11.2.2 Instruction Set Table 1........................................................................................................18
W25Q64BV
11.2.3 Instruction Set Table 2 (Read Instructions) ........................................................................19
Publication Release Date: July 08, 2010
- 3 - Revision E
11.2.4 Write Enable (06h)..............................................................................................................20
11.2.5 Write Disable (04h).............................................................................................................20
11.2.6 Read Status Register-1 (05h) and Read Status Register-2 (35h).......................................21
11.2.7 Write Status Register (01h) ................................................................................................22
11.2.8 Read Data (03h) .................................................................................................................23
11.2.9 Fast Read (0Bh) .................................................................................................................24
11.2.10 Fast Read Dual Output (3Bh) ...........................................................................................25
11.2.11 Fast Read Quad Output (6Bh)..........................................................................................26
11.2.12 Fast Read Dual I/O (BBh).................................................................................................27
11.2.13 Fast Read Quad I/O (EBh) ...............................................................................................29
11.2.14 Octal Word Read Quad I/O (E3h).....................................................................................31
11.2.15 Page Program (02h) .........................................................................................................33
11.2.16 Quad Input Page Program (32h) ......................................................................................34
11.2.17 Sector Erase (20h) ...........................................................................................................35
11.2.18 32KB Block Erase (52h) ...................................................................................................36
11.2.19 64KB Block Erase (D8h)...................................................................................................37
11.2.20 Chip Erase (C7h / 60h).....................................................................................................38
11.2.21 Erase Suspend (75h)........................................................................................................39
11.2.22 Erase Resume (7Ah) ........................................................................................................40
11.2.23 Power-down (B9h)............................................................................................................41
11.2.24 High Performance Mode (A3h) .........................................................................................42
11.2.25 Release Power-down or High Performance Mode / Device ID (ABh) ...............................42
11.2.26 Read Manufacturer / Device ID (90h) ...............................................................................44
11.2.27 Read Unique ID Number (4Bh).........................................................................................45
11.2.28 Read JEDEC ID (9Fh) ......................................................................................................46
11.2.29 Continuous Read Mode Reset (FFh or FFFFh)................................................................47
12. ELECTRICAL CHARACTERISTICS .............................................................................................. 48
12.1 Absolute Maximum Ratings................................................................................................ 48
12.2 Operating Ranges .............................................................................................................. 48
12.3 Power-up Timing and Write Inhibit Threshold .................................................................... 49
12.4 DC Electrical Characteristics.............................................................................................. 50
12.5 AC Measurement Conditions ............................................................................................. 51
12.6 AC Electrical Characteristics .............................................................................................. 52
12.7 AC Electrical Characteristics (cont’d)................................................................................. 53
12.8 Serial Output Timing........................................................................................................... 54
12.9 Input Timing........................................................................................................................ 54
12.10 Hold Timing ....................................................................................................................... 54
13. PACKAGE SPECIFICATION.......................................................................................................... 55
W25Q64BV
13.1
8-Pin SOIC 208-mil (Package Code SS) ...........................................................................55
- 4 -
13.2
8-Pin PDIP 300-mil (Package Code DA)............................................................................ 56
13.3 8-Contact 8x6mm WSON (Package Code ZE) .................................................................. 57
13.4 16-Pin SOIC 300-mil (Package Code SF).......................................................................... 58
14. ORDERING INFORMATION .......................................................................................................... 59
14.1 Valid Part Numbers and Top Side Marking........................................................................ 60
15. REVISION HISTORY...................................................................................................................... 61
W25Q64BV
Publication Release Date: July 08, 2010
- 5 - Revision E
1. GENERAL DESCRIPTION
The W25Q64BV (64M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial
Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI
(XIP) and storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with
current consumption as low as 4mA active and 1µA for power-down. All devices are offered in space-
saving packages.
The W25Q64BV array is organized into 32,768 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (sector erase), groups of 128 (32KB
block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q64BV has 2,048
erasable sectors and 128 erasable blocks respectively. The small 4KB sectors allow for greater flexibility
in applications that require data and parameter storage. (See figure 2.)
The W25Q64BV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 80MHz are supported allowing
equivalent clock rates of 160MHz for Dual Output and 320MHz for Quad Output when using the Fast
Read Dual/Quad Output instructions. These transfer rates can outperform standard Asynchronous 8 and
16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as
few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP (execute in place)
operation.
A Hold pin, Write Protect pin and programmable write protection, with top or bottom array control,
provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and
device identification with a 64-bit Unique Serial Number.
2. FEATURES
• Family of SpiFlash Memories
– W25Q64BV: 64M-bit / 8M-byte (8,388,608)
– 256-bytes per programmable page
• Standard, Dual or Quad SPI
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO
0
, IO
1
, /WP, /Hold
– Quad SPI: CLK, /CS, IO
0
, IO
1
, IO
2
, IO
3
• Highest Performance Serial Flash
– Up to 6X that of ordinary Serial Flash
– 80MHz clock operation
– 160MHz equivalent Dual SPI
– 320MHz equivalent Quad SPI
– 40MB/S continuous data transfer rate
• Efficient “Continuous Read Mode”
– Low Instruction overhead
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Note 1: Contact Winbond for details
• Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down (typ.)
– -40°C to +85°C operating range
• Flexible Architecture with 4KB sectors
– Uniform Sector Erase (4K-bytes)
– Block Erase (32K and 64K-bytes)
– Program one to 256 bytes
– More than 100,000 erase/write cycles
– More than 20-year data retention
• Advanced Security Features
– Software and Hardware Write-Protect
– Top or Bottom, Sector or Block selection
– Lock-Down and OTP protection
(1)
– 64-Bit Unique ID for each device
(1)
• Space Efficient Packaging
– 8-pin SOIC 208-mil
– 8-pin PDIP 300-mil
– 8-pad WSON 8x6-mm
– 16-pin SOIC 300-mil
– Contact Winbond for KGD and other options
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