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YINTR23348-Status_of_the_Memory_Industry_2023.pdf
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YINTR23348-Status_of_the_Memory_Industry_2023.pdf
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INTELLIGENCE TO SHAPE YOUR TOMORROW
| www.yolegroup.com | ©Yole Intelligence 2023
Status of the Memory
Industry 2023
YINTR23348
Market and Technology Report
TABLE OF CONTENTSTABLE OF CONTENTS
2
Status of the Memory Industry 2023 | Report | www.yolegroup.com
Status of the Memory Industry 2023
• Stand-alone memory technology - overview 118
o NAND technology trends 122
o DRAM technology trends 134
o Monolithic 3D DRAM – overview 146
o NOR and other stand-alone memory 151
• Memory players and supply chain 160
o Memory players – financial analysis 169
o Supply chain mapping 182
o 2022-203 business highlights 193
List of mergers & acquisitions and noteworthy news
• China’s memory business 202
Status and prospects, investments, competitive landscape
• DRAM modules and solid-state drives – overview 214
Technology and market trends for DIMMs and SSDs
• Memory packaging – overview 225
• Emerging non-volatile memory – overview 236
• Emerging storage and memory trends 245
o Computational storage 247
o Processing in memory 252
o Compute Express Link (CXL) 256
o DNA-based storage 261
• Embedded memory business – overview 265
• Conclusions 272
• About Yole Group 279
• Yole Group Corporate presentation 282
• Glossary and definitions 3
• Objectives 6
• Scope of the report 7
• Methodology & definitions 9
• About the authors 10
• Companies cited in this report 12
• What we got right, what we got wrong 13
• 3-page summary 15
• Executive summary 19
• NAND market forecast 45
Revenues, demand, shipments, ASPs, wafer production, capex…
• DRAM market forecast 53
Revenues, demand, shipments, ASPs, wafer production, capex…
• NOR and other stand-alone memory market forecast 61
Revenue forecast for NOR, (NV)SRAM, Emerging NVM, and more
• Memory demand forecast by end system 65
NAND and DRAM bit demand and average content in $ and GB
• Stand-alone memory market overview 73
• Memory market trends – overview by end markets 83
o Telecom & infrastructure (focus on data center) 86
o Mobile and consumer 93
o Focus on smartphones and tablets 94
o Focus on computing (desktop and laptop PCs) 100
o Focus on wearables and other consumer devices 106
o Automotive 111
3
Status of the Memory Industry 2023 | Report | www.yolegroup.com
GLOSSARY AND DEFINITIONS
ASIC: Application-Specific Integrated Circuit
ASSP: Application-Specific Standard Product
ASP: Average Selling Price
APU: Application Processor Unit
BEOL: Back End of Line
CAGR: Compound Annual Growth Rate
CMOS: Complementary Metal Oxide Semiconductor
CMOX: Conductive Metal-Oxide
CXL: Compute Express Link
DDR: Double Data Rate
DIMM: Dual In-Line Memory Module
DRAM: Dynamic Random-Access Memory
ECC: Error Code Correction
EUV: Extreme Ultra-Violet
F
2
: Memory-cell size unit (
F
is the smallest feature size)
FC-BGA: Flip Chip Ball Grid Array
FEOL: Front End of Line
FFET: Ferroelectric Field-Effect Transistor
FRAM: Ferroelectric RAM
FOWLP: Fan-Out Wafer-Level Packaging
FPGA: Field-Programmable Gate Array
GDDR: Graphics DDR (used in GPU)
HBM: High Bandwidth Memory
HMC: Hybrid Memory Cube
IOPS: Input/Output Operations Per Second
LPDDR: Low-Power DDR (used in mobile applications)
MMC: Multimedia Card (packaging standard)
MCP: Multi-Chip Package
ML: Machine Learning
MLC: Multi-Level Cell
MPU: Microprocessor Unit
MRAM: Magnetic Random-Access Memory
NAND: Flash memory with logical NAND-type structure
NOR: Flash memory with logical NOR-type structure
NRAM: Nanotube RAM
NV: Non-Volatile
PCIe: Peripheral Component Interconnect Express
PCM: Phase-Change Memory
PCB: Printed Circuit Board
PoP: Package on Package
QLC: Quad-Level Cell
RRAM: Resistive Random-Access Memory
SAM: Serviceable Available Market
SAQP: Self-Aligned Quadruple Patterning
SCM: Storage Class Memory
SiP: System in Package
SLC: Single-Level Cell
SoC: System on Chip
SRAM: Static Random-Access Memory
SSD: Solid-State Drive
STT: Spin-Transfer Torque Magnetic RAM
TAM: Total Accessible Market
TLC: Triple-Level Cell
TSV: Through Silicon Via
WLCSP: Wafer-Level Chip-Scale Packaging
WB-BGA: Wire Bond Ball Grid Array
x, y, z,
α
,
β
,
γ
,
δ: indicate the technology generation in a given class, e.g., 1y
denotes the 2
nd
generation of the “10nm class”
4
Status of the Memory Industry 2023 | Report | www.yolegroup.com
DEFINITIONS – MEMORY DENSITY
Mind the unit!
Name of the unit Abbreviation Size
bit b “0 or 1”
byte B 8 bits
Kilobit Kb 10
3
bits
Kilobyte KB 10
3
bytes (8 Kb)
Megabit Mb 10
6
bits
Megabyte MB 10
6
bytes (8 Mb)
Gigabit Gb 10
9
bits
Gigabyte GB 10
9
bytes (8 Gb)
Terabit Tb 10
12
bits
Terabyte TB 10
12
bytes (8 Tb)
Petabit (million of Gb) Pb 10
15
bits
Petabyte (million of GB) PB 10
15
bytes (8 Pb)
Exabit (billion of Gb) Eb 10
18
bits
Exabyte (billion of GB) EB 10
18
bytes (8 Eb)
Zettabit (trillion of Gb) Zb 10
21
bits
Zettabyte (trillion of GB) ZB 10
21
bytes (8 Zb)
5
Status of the Memory Industry 2023 | Report | www.yolegroup.com
DEFINITIONS – MEMORY TECHNOLOGIES
Memory
Non-volatile
Standard
Flash
NAND
NVSRAM
EEPROM
Emerging
MRAM &
STT-MRAM
PCM
RRAM
(
e.g.,
CBRAM, OxRAM)
FeRAM &
FeFET
Volatile
DRAM
SRAM
NRAM
(carbon nanotubes)
Flash
NOR
Note: some “emerging” memories have already emerged and are now in mass production, whereas
others are still in R&D or in pre-production and could be more appropriately referred to as
“prototypical”. Here, the term “emerging” is used to indicate all recent technologies and to
distinguish them from their mainstream counterparts.
Volatile memory
• Requires power supply to retain information.
• Examples: DRAM, SRAM.
Non-volatile memory
• Retains stored information even when unpowered.
Mainstream NVM technologies are based on electrical
charge storage.
• Examples: flash NAND and NOR.
Random access memory
• Data can be read and written in the same amount of time,
irrespective of the physical location inside the memory.
Emerging non-volatile memory
• Based on principles different from retention of charges.
• Some products are already available on the market, and
mass production has started. Certain newly emerging
memories are still under development.
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