In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0:56Cd0:44Se observed in Raman spectra suggests that the crystalquality of ZnCdS
