Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1×1013, 1×1014, 1×1015, and 5×1015 atom/cm2, respectively. The effects of the implantation dose and annealing temperature on the GaN band-edge luminescence are investigated. The cathodoluminescence spectra from 82 to 323 K are measured for 1×1015 atom/cm2-implanted GaN annealed at 1100°C. Luminescence peaks at 356, 362, 376, 390, and 414 nm are ob
