Trapping analysis and countermeasure for arsenic auto-doping in ...

In this work, a methodology to analyze trapping mechanism of As auto-doping has been presented in the epitaxial.diode array and CMOS integration. With a temperature-pressure optimization in three-step silicon epitaxial.growth being proposed, As trapping mechanism has been revealed and auto-doping effect has been suppressed.efficiently. Most importantly, the shifting CMOS devices are adjusted to meet the 40-nm Wafer.Acceptance Test (WAT) target value according to technology computer aided design