Physically based model for trapping and self-heating effects in ...

In order to accurately and simply extract the trapping parameters in SiC metal semiconductor field effect transistors (MESFETs) a method is proposed based on device dc and ac small-signal models. By combining modeling techniques, material physics, and measured device characteristics, we are able to estimate the important information about the trap property and heat flow in 4H-SiC material and their influences on performance of MESFET devices, including gate lag, frequency-related dispersion, and