Monoclinictungstenoxidenanorodswithdiametersof50-150nmandlengthsof5-20毫米havebeen <br>生长directlyontoporoussiliconwithnocatalystbythermalevaporation.Theobtainedproducts <br>是investigatedbyscanningelectronmicroscopy，X光衍射，拉曼光谱学，能量<br> dispersivespectroscopy，andtransmissionelectronmicroscopy.Themechanismswhichyielddifferent <br> distributionsofnanorodsontoporoussiliconwerestudied.ThesensitivitytoNO2的theporoussilicon / <BR>硅传感器在室温下对NO2具有良好的响应和回收特性。检测到的最低的NO2浓
