Patterning of self-assembled monolayer (SAM) was demonstrated by area-selective deposition of SAMs on a pattern made by synchrotron radiation (SR) stimulated etching SiO2 thin films. The etching was conducted by exposing the SiO2 films to SR through a Co contact mask with SF6+O2 as the reaction gas. A dodecene SAM was deposited on the etched surface and an octadecyltrichlorosilane SAM was deposited on the SiO2 surface. The deposited SAMs were densely packed and well ordered, which were character
