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Antenna-assisted subwavelength metal–

InGaAs–metal structure for sensitive

and direct photodetection of millimeter

and terahertz waves

JINCHAO TONG,

1,2,†

YUE QU,

2,3,†

FEI SUO,

1,†

WEI ZHOU,

ZHIMING HUANG,

2,4,5

AND DAO HUA ZHANG

1,6

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

University of Chinese Academy of Sciences, Beijing 100049, China

Key Laboratory of Space Active Opto-electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,

Shanghai 200083, China

e-mail: zmhuang@mail.sitp.ac.cn

e-mail: EDHZHANG@ntu.edu.sg

Received 21 September 2018; revised 4 November 2018; accepted 11 November 2018; posted 13 November 2018 (Doc. ID 346503);

published 21 December 2018

Millimeter and terahertz wave photodetectors have a wide range of applications. However, the state-of-the-art

techniques lag far behind the urgent demand due to the structure and performance limitations. Here, we report

sensitive and direct millimeter and terahertz wave photodetection in compact InGaAs-based subwavelength

ohmic metal–semiconductor–metal structures. The photoresponse originates from unidirectional transpor-

tation of nonequilibrium electrons induced by surface plasmon polaritons under irradiation. The detected

quantum energies of electromagnetic waves are far below the bandgap of InGaAs, offering, to the best of our

knowledge, a novel direct photoelectric conversion pathway for InGaAs beyond its bandgap limit. The achieved

room temperature rise time and noise equivalent power of the detector are 45 μs and 20 pW · Hz

−1∕2

, respectively,

at the 0.0375 THz (8 mm) wave. The detected wavelength is tunable by mounting different coupling antennas.

Room temperature terahertz imaging of macroscopic samples at around 0.166 THz is also demonstrated. This

work opens an avenue for sensitive and large-area uncooled millimeter and terahertz focal planar arrays.

Chinese Laser Press

https://doi.org/10.1364/PRJ.7.000089

1. INTRODUCTION

Millimeter and terahertz (THz) wave technologies have at-

tracted unprecedented attention owing to their significance

in almost all scientific and technological fields, including re-

mote sensing, spectroscopy, imaging, and communications

[1–5]. However, they still face challenges in high-performance

building blocks such as detectors. Conventional photodetec-

tion based on bandgap or intersubband transitions in optoelec-

tronic semiconductors does not perform well in millimeter and

terahertz wave ranges due to their relatively small photon en-

ergy (1 THz–4.14 meV) and strong background thermal noise.

Commercially available Golay cells, pyroelectric elements, and

bolometers, despite their widespread use, either suffer from

slow response (typically, ms level for Golay cell and pyroelectric

elements) or require cryogenic cooling (typically, liquid-

helium-cooled temperature for Si bolometers) for normal op-

eration due to the intrinsic thermal response mechanism [6].

Schottky barrier diodes have high speed but require very

advanced growth and fabrication techniques [7].

In the past decades, the development of sensitive millimeter

and terahertz wave detectors has been highly active. Terahertz

field effect transistors (FETs), with a fast response speed and good

responsivity, are promising candidates. They are usually built with

a nanoscale transistor channel where a plasma wave is excited to

enable the photodetection [8–10]. Terahertz photoconductive

antennas (THz-PCs) have been very successfully and maturely

used in terahertz time domain systems (THz-TDSs). To allow

indirect detection of terahertz radiation, a local femtosecond laser

is required to pump the semiconductor (usually requires high re-

sistivity and ultra-short carrier lifetime) located in the gap of the

antenna [11,12]. Terahertz quantum-well infrared photodetec-

tors are based on intersubband transitions and require the oper-

ation in extremely low-temperature conditions and high-quality

quantum wells [13]. In addition, two-dimensional materials,

Research Article

Vol. 7, No. 1 / January 2019 / Photonics Research 89

as well as topological insulators, have also been investigated for

their capability of detecting terahertz radiation [14–18]. Among

them, graphene-based terahertz detectors, including FETs [13],

hot electron bolometers [14], and photothermoelectric devices

[15], have been demonstrated with a noise equivalent power

(NEP) less than 10 nW · Hz

−1∕2

for room temperature opera-

tion, sensitivity comparable to that of a Si bolometer, and pulse

response as fast as 110 ps, respectively. Terahertz photodetection,

using bismuth selenide (Bi

)[19], has also been reported re-

cently, exhibiting the ability of topological insulators for terahertz

photoelectric conversion. Besides, terahertz single-photon detec-

tors have also been realized at temperatures of T<1K,dem-

onstrating an extremely low NEP of 10

−22

W · Hz

−1∕2

[20].

In recent years, surface plasmon polaritons (SPPs) in sub-

wavelength structures have been attracting more and more atten-

tion, as they have a wide variety of applications, depending on

the dimensions of the plasmonic structures and operational fre-

quency range [21–25]. Millimeter and terahertz wave photode-

tection can be realized by localized-SPP-induced nonequilibrium

electrons in antenna-assisted subwavelength ohmic metal–

semiconductor–metal (OMSM) structure [20]. In the previous

work, the detection was verified by simulation and experiments

from the devices made of gold and InSb. However, as the current

epitaxial growth technique for InSb on an insulating substrate

has a lattice mismatch issue, the InSb slices were fabricated

by polishing bulk wafers into thin films, which was difficult

for fabricating large planar arrays with multiple pixels.

Here, we report direct millimeter and terahertz wave photo-

detectors based on In

0.53

0.47

As epitaxially grown on lattice-

matched InP substrates. In this device, a subwavelength

OMSM structure is used to convert the absorbed photons into

localized SPPs, which then induce nonequilibrium electrons near

the metal–semiconductor interfaces, while the antenna increases

the number of photons coupled into the OMSM structure. The

nonequilibrium electrons induced by SPPs will form unidirec-

tional photocurrent under an external voltage bias. Normal tera-

hertz antennas (designed for different frequency ranges) are used

to improve the coupling efficiency of incident radiation into the

subwavelength detecting structure. The compact devices omit

local laser pumping in THz-PCs and complicated treble elec-

trodes in THz-FETs, exhibiting excellent performance with re-

spect to the state of the art for room temperature operation. At

0.0375 THz (8 mm), the typical rise time and noise equivalent

power of the detector are 45 μsand20 pW · Hz

−1∕2

,respec-

tively. Beyond the proof of concept, millimeter and terahertz im-

aging at 0.166 THz (1.81 mm) has been demonstrated for

macroscopic samples in a realistic setting. The detected photons

have a far smaller quantum energy than the bandgap of

0.53

0.47

As, allowing a novel direct optoelectrical property

beyond the bandgap limit. Moreover, the sensitive terahertz de-

tection is based on In

0.53

0.47

As∕InP,whichisamaturetech-

nology, offering a promising avenue for sensitive and large-area

uncooled millimeter and terahertz focal planar arrays.

2. EXPERIMENTAL SETUP AND METHODS

A. Device Design

In the device architecture, the length L of InGaAs is much less

than the wavelength of the incident radiation λ (Fig. 1). Under

transverse magnetic (TM) polarized illumination, the planar

dipole-like antenna (or other type antennas), which is designed

for a spe cific wavelength, will efficiently couple photons into

the structure. Owing to the negative permittivity of InGaAs

[26] in the frequency range of interest, localized SPPs will

be excited by the coupled photons within InGaAs, especially

near the InGaAs–Au interfaces on the top facet [27]. The

SPPs then induce nonequilibrium electrons by transferring en-

ergy to electrons in InGaAs. With zero bias, the SPP-induced

nonequilibrium electrons have a symmetric distribution due to

the symmetry of the device structure. However, when an ex-

ternal bias is applied, the SPP-induced electrons will flow

through InGaAs, leading to the generati on of photocurrent.

InGaAs is a well-known III–V semiconductor that is com-

monly used as an interband transition-based photodetection

material for the near-infrared (NIR) range, with both photocon-

ductive and photovoltaic architectures [28]. It has been maturely

used as focal planar arrays in the NIR range. It is lattice matched

to the InP substrate when the component of indium is approx-

imately 0.53, which offers a good material quality and capability

of large-scale wafer growth. The metal organic chemical vapor

deposition grown In

0.53

0.47

As in our work has a bandgap

of ∼752 meV, an electron concentration of ∼5.9 × 10

−3

and an electron mobility of 7000–8000 cm

· V

−1

· s

−1

at room

temperature. The substrate is 350 μm SI InP (100) doped with

Fe. The resistivity is 5 × 10

Ω · cm. The plasma frequency of

0.53

0.47

As is near 3.2 THz, which is in the terahertz wave

range and allows negative permittivity below it [25,29]. The pla-

nar antenna depicted in Fig. 1 is configured as a half-wave dipole

designed for a specific wavelength (∼0.0375 THz∕8mm)[30].

It is worth noting that this detection strategy based on InGaAs is

quite different from the InGaAs-based [31](GaAs[10 ,11]or

Ge [32]) indirect terahertz photoconductive antennas, where

InGaAs

InP

Antenna

Wire bonding

(a) (b)

(c)

Fig. 1. Schematic of the antenna-assisted subwavelength ohmic

Au–InGaAs–Au photodetector (not drawn to scale). (a) Full view

of the schematic of the photodetector. (b) Scanning electron micro-

scope image of the fabricated device with wire bonding. The scale

bar represents 1 mm. (c) The zoom in tridimensional view for the

central part of the structure. L is the length of the semiconductor,

and s is the spacing between the edges of the two ohmic contacts.

W and t are the width and thickness of the InGaAs layer, respectively.

The left-bottom inset is the cross section of the In

0.53

0.47

As∕InP

detector.

90 Vol. 7, No. 1 / January 2019 / Photonics Research

Research Article

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