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通过调制施加电压在ap-Cu2ZnSnS4 / n-GaN异质结光电二极管中的替代光谱光响应
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2021-03-18
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我们报告p-Cu2ZnSnS4(p-CZTS)/ n-GaN异质结光电二极管中的替代可见光和紫外光响应光谱。使用磁控溅射法将CZTS膜沉积在n-GaN /蓝宝石衬底上。 p-CZTS / n-GaN异质结光电二极管的电流-电压特性显示出良好的整流性能。这光谱响应测量表明,可以通过施加零偏和反向偏压将光电二极管的响应波长从紫外线调谐到可见光区域。提出了在p-CZTS / n-GaN异质结界面处的能带对准来解释器件的光谱响应。
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Alternative Spectral Photoresponse in a p‑Cu
2
ZnSnS
4
/n‑GaN
Heterojunction Photodiode by Modulating Applied Voltage
Gang Yang,
†
Yong-Feng Li,*
,†,‡
Bin Yao,*
,†,‡
Zhan-Hui Ding,
†
Rui Deng,
§
Xuan Fang,
∥
and Zhi-Peng Wei
∥
†
State Key Lab of Superhard Materials and College of Physics, Jilin University, Changchun 130012, People’s Republic of China
‡
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University,
Changchun 130012, China
§
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
∥
State Key Laboratory on High-Power Semiconductor Lasers, Changchun University of Science and Technology, 7186 Wei-Xing
Road, Changchun 130022, China
ABSTRACT: We report alternative visible and ultraviolet light response spectra in a p-Cu
2
ZnSnS
4
(p-CZTS)/n-GaN
heterojunction photodiode. A CZTS film was deposited on an n-GaN/sapphire substrate using a magnetron sputtering method.
Current−voltage characteristic of the p-CZTS/n-GaN heterojunction photodiode showed a good rectifying behavior. The
spectral response measurements indicate that the response wavelength of the photodiode can be tuned from ultraviolet to visible
regions via applying zero and reverse bias. A band alignment at the interface of the p-CZTS/n-GaN heterojunction was proposed
to interpret the spectral response of the device.
KEYWORDS: photodiode, GaN, magnetron sputtering, Cu
2
ZnSnS
4
, heterojunction
■
INTRODUCTION
Solar energy is considered to be the most economic and
effective available renewable energy resources.
1−3
Photovoltaic
(PV) cells including thin film solar cells,
4
dye-sensitized solar
cells,
5
organic bulk junction solar cells,
6
and hybrid perovskite
solar cells
7,8
have been widely investigated because they can
convert sunlight directly into electricity. In recent years, the
kesterite Cu
2
ZnSnS
4
(CZTS) emerged as a potential p-type
material used in thin film photovoltaic applications.
9−12
It has
an ideal direct bandgap of about 1.5 eV and a large absorption
coefficient (>10
4
cm
−1
).
13,14
The use of only nontoxic and
abundant elements makes it to be more environmental friendly
and economical compared with CdTe and Cu(In
1−x
Ga
x
)-
Se
2.
15,16
Recently, various deposition techniques including
vacuum and nonvacuum methods were applied to fabricate
CZTS solar cells, and the power conversion efficiency (PCE)
record has been updated rapidly.
17−19
A typical structure of CZTS solar cells is Mo/CZTS/CdS/
ZnO/ZnO:Al/Al.
11
The n-type CdS buffer layer is fabricated
on the p-type CZTS absorption layer to form a p−n junction,
where carriers are separated as light irradiates. The wide
bandgap semiconductors including an intrinsic ZnO and a
heavily n-doped ZnO:Al were usually used as the window layer,
which reduces the series resistance of solar cells.
20
Recently,
researches also focused on direct deposition of n-type wide-
bandgap ZnO on p-type CZTS to form Cd-free p-CZTS/n-
ZnO heterojunction devices.
21,22
Htay et al. reported the higher
open circuit voltage (V
oc
) and relative quantum efficiency at the
short wavelength regions in the p-CZTS/n-ZnO heterojunction
solar cells than those using CdS as the buffer layer.
23
They
ascribed these to the higher built-in potential induced by the
wider bandgap ZnO and the increase of transparency. In
addition, the proposed type-I band alignment of CZTS/ZnO
heterojunction (i.e., the conduction band of CZTS is lower
than that of ZnO) can reduce the recombination rate greatly.
Among lots of wide-bandgap semiconductors, gallium nitride
(GaN) has the same wurtzite structure with ZnO and similar
wide direct bandgap (3.4 eV).
24,25
But few reports were
available for the CZTS/GaN heterojunction. Due to the
advantages of high saturation velocity (2.7 × 10
7
cm/s),
radiation hardness, tolerability of aggressive environments, and
a more mature processing technique, GaN was widely used for
fabricating photodetectors.
26−28
More importantly, the type-I
band alignment of the CZTS/GaN interface with a small
Received: May 17, 2015
Accepted: July 16, 2015
Published: July 16, 2015
Research Article
www.acsami.org
© 2015 American Chemical Society 16653 DOI: 10.1021/acsami.5b04287
ACS Appl. Mater. Interfaces 2015, 7, 16653−16658
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