We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics are both observed for this device. An ON-state optical output power of 98 mW and an on-off extinction ratio of 22 dB were demonstrated between the bistable states. A qualitative physical model based on
