Using two-step method InP epilayers were grown on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). X-ray diffraction (XRD) and room-temperature (RT) photoluminescence (PL) were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs(100) heterostructures was obtained by optimizing the initial low-temperature (LT) InP growth conditions, investigating the effects of thermal cycle annealing (TCA) and strained layer superlattic
