Please
cite
this
article
in
press
as:
B.
Ren,
et
al.,
Thermal
stability
of
hydrogenated
diamond
films
in
nitrogen
ambi-
ence
studied
by
reflection
electron
energy
spectroscopy
and
X-ray
photoelectron
spectroscopy,
Appl.
Surf.
Sci.
(2015),
http://dx.doi.org/10.1016/j.apsusc.2015.10.067
ARTICLE IN PRESS
G Model
APSUSC-31548;
No.
of
Pages
6
Applied
Surface
Science
xxx
(2015)
xxx–xxx
Contents
lists
available
at
ScienceDirect
Applied
Surface
Science
jou
rn
al
h
om
ep
age:
www.elsevier.com/locate/apsusc
Thermal
stability
of
hydrogenated
diamond
films
in
nitrogen
ambience
studied
by
reflection
electron
energy
spectroscopy
and
X-ray
photoelectron
spectroscopy
Bing
Ren,
Jian
Huang
∗
,
Hongze
Yu,
Weichuan
Yang,
Lin
Wang,
Zhangmin
Pan,
Linjun
Wang
∗
School
of
Materials
Science
and
Engineering,
Shanghai
University,
Shanghai
200444,
PR
China
a
r
t
i
c
l
e
i
n
f
o
Article
history:
Received
26
August
2015
Received
in
revised
form
8
October
2015
Accepted
10
October
2015
Available
online
xxx
Keywords:
Hydrogenated
diamond
films
Thermal
stability
REELS
Rapid
annealing
a
b
s
t
r
a
c
t
(1
1
0)-oriented
diamond
films
were
grown
by
microwave
plasma
chemical
vapor
deposition
technique,
followed
by
an
optimized
hydrogen-plasma
treatment
process.
Thermal
stability
of
hydrogenated
dia-
mond
films
were
studied
by
annealing
in
nitrogen
atmosphere
at
temperature
varied
from
400
to
950
◦
C.
Reflection
electron
energy
spectroscopy
associated
with
X-ray
photoelectron
spectroscopy
indicates
that
approximate
at.
50%
hydrogen
was
present
at
the
surface
of
hydrogenated
diamond
films,
which
is
close
to
the
theoretical
value.
Pinning
effect
in
surface
Fermi
level
in
hydrogenated
diamond
films
could
not
be
eliminated
by
annealing
in
nitrogen
until
the
temperature
was
exceeded
950
◦
C.
The
films
underwent
hydrogen
desorption
and
subsequent
graphitization
mainly
on
the
very
surface
region
without
signifi-
cant
bulk
modification.
Besides,
hydrogenated
diamond
films
annealed
in
N
2
at
950
◦
C
showed
similar
hydrophilicity
and
resistance
to
that
of
the
oxidized
one,
indicating
rupture
of
C-H
bond
on
the
surface
of
hydrogenated
diamond
films.
©
2015
Elsevier
B.V.
All
rights
reserved.
1.
Introduction
Diamond
films-based
devices
have
attracted
considerable
atten-
tion
in
the
past
few
decades
for
their
potential
electronic
and
optoelectronic
applications
with
unique
and
excellent
proper-
ties,
such
as
high-temperature
high-power
diodes,
high-frequency
field-effect
transistors
(FETs),
high
energy
particles
detectors,
etc.
[1–7].
Most
diamond
field-effect
transistors
(FETs)
are
based
on
(0
0
1)
homo-epitaxial
diamond
films
with
a
hydrogen-terminated
diamond
film
acting
as
a
conductive
channel
without
any
doping
impurities
[8–11].
However,
the
size
of
a
single-crystal
chem-
ical
vapor
deposition
(CVD)
diamond
films
is
estimated
to
be
several
millimeters,
which
limits
its
application
in
wireless
com-
munications
systems.
Many
researches
show
that
highly
(1
1
0)
oriented
diamond
films
grown
on
large-area
foreign
substrates
would
be
perfect
candidates
to
homo-epitaxial
diamond
films,
as
well
as
hydrogen-terminated
(1
1
0)
diamond
film-based
FETs
exhibit
excellent
properties
[1,7,12,13].
∗
Corresponding
authors.
E-mail
addresses:
jianhuang@shu.edu.cn
(J.
Huang),
ljwang@shu.edu.cn
(L.
Wang).
It
is
reported
that
none
broken-up
of
C–H
bond
appears
on
both
(1
0
0)
and
(1
1
1)
surface
of
hydrogenated
diamond
films
until
annealing
temperature
exceeds
700
◦
C
in
an
ultra-high
vacuum
(UHV)
condition
[14,15].
Besides,
the
surface
conductivity
of
hydro-
genated
diamond
films
with
(1
0
0)
aligned
grains
is
irretrievably
lost
if
a
sample
is
annealed
above
200
◦
C
in
air
due
to
desorption
of
hydrocarbon.
However,
there
was
little
study
on
thermal
stability
of
hydrogenated
diamond
films
with
(1
1
0)
preferential
orientation,
which
are
widely
used
as
conductive
channels
in
diamond
FETs.
Generally
speaking,
the
hydrogen
content
in
hydrogenated
sam-
ples
is
always
quantified
by
elastic
recoil
detection
analysis
(ERDA),
nuclear
reaction
analysis
(NRA),
Time
of
flight
secondary
ion
mass
spectrometry
(TOF-SIMS)
and
nuclear
magnetic
resonance
(NMR),
etc.
[16].
ERDA,
NRA
and
TOF-SIMS
technique,
however
cannot
be
used
routinely
to
determine
hydrogen
content
for
the
requirement
of
ion
accelerators
which
are
expensive
and
not
readily
available
in
many
laboratories.
NMR,
on
the
other
hand
requires
the
mass
of
material
(on
the
order
of
100
mg),
which
is
not
easily
available
when
dealing
with
thin
films.
While
reflection
electron
energy
loss
spectroscopy
(REELS)
associated
with
X-ray
photoelectron
spec-
troscopy
(XPS)
is
an
emerging
technique
to
semi-quantitatively
identify
almost
whole
elements
including
light
elements
(H
or
He)
within
just
several
nanometers
depth,
which
meets
our
need
to
http://dx.doi.org/10.1016/j.apsusc.2015.10.067
0169-4332/©
2015
Elsevier
B.V.
All
rights
reserved.
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